X-On Electronics has gained recognition as a prominent supplier of UMY1NTR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMY1NTR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

UMY1NTR ROHM

UMY1NTR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.UMY1NTR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN/PNP 50V 150MA
Datasheet: UMY1NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0883 ea
Line Total: USD 0.44

Availability - 2001
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2001
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 5
Multiples : 5
5 : USD 0.0883
50 : USD 0.0636
150 : USD 0.0488
500 : USD 0.0443
3000 : USD 0.0406
6000 : USD 0.0387

2212
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4473
10 : USD 0.3105
100 : USD 0.1265
1000 : USD 0.0978
3000 : USD 0.0794
9000 : USD 0.0701
24000 : USD 0.0667
45000 : USD 0.0632
99000 : USD 0.0621

2910
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 298
Multiples : 1
298 : USD 0.3423
500 : USD 0.3299
1000 : USD 0.3191
2500 : USD 0.3098

4464
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 173
Multiples : 1
173 : USD 0.2357
200 : USD 0.2227
500 : USD 0.1707
1000 : USD 0.1308
2000 : USD 0.1247
3000 : USD 0.1053

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the UMY1NTR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMY1NTR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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EMY1 / UMY1N / FMY1A Datasheet Emitter common (dual transistors) <For Tr1(PNP)> llOutline Parameter Value SOT-553 SOT-353 V -50V CEO I -150mA C EMY1 UMY1N <For Tr2(NPN)> (EMT5) (SMT5) Parameter Value SOT-25 V 50V CEO I 150mA C FMY1A (SMT5) llFeatures llInner circuit 1) Included a 2SA1037AK and a 2SC2412K EMY1 / UMY1N transistor in a EMT, UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) PNP and NPN transistors have common emitters. 4) Mounting cost and area can be cut in half. FMY1A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMY1 1616 T2R 180 8 8000 Y1 (EMT5) SOT-353 UMY1N 2021 TR 180 8 3000 Y1 (SMT5) SOT-25 FMY1A 2928 T148 180 8 3000 Y1 (SMT5) www.rohm.com 1/11 20150825 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMY1 / UMY1N / FMY1A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -60 60 V CBO Collector-emitter voltage V -50 50 V CEO V Emitter-base voltage -6 7 V EBO I Collector current -150 150 mA C *1 *2 EMY1/ UMY1N P 150 mW/Total D Power dissipation *1 *3 FMY1A P 300 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50A -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E I Collector cut-off current V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 V CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/11 20150825 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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