EMZ2 / UMZ2N / IMZ2A Datasheet Power management (dual transistors) <For Tr1(PNP)> llOutline Parameter Value SOT-563 SOT-363 V -50V CEO I -150mA C EMZ2 UMZ2N <For Tr2(NPN)> (EMT6) (UT6) Parameter Value SOT-457 V 50V CEO I 150mA C IMZ2A (SMT6) llFeatures llInner circuit 1) Included a 2SA1037AK and a 2SC2412K EMZ2 / UMZ2N transistor in a EMT, UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMZ2A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMZ2 1616 T2R 180 8 8000 Z2 (EMT6) SOT-363 UMZ2N 2021 TR 180 8 3000 Z2 (UT6) SOT-457 IMZ2A 2928 T108 180 8 3000 Z2 (SMT6) www.rohm.com 1/11 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsEMZ2 / UMZ2N / IMZ2A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -60 60 V CBO Collector-emitter voltage V -50 50 V CEO V Emitter-base voltage -6 7 V EBO I Collector current -150 150 mA C *1 *2 EMZ2/ UMZ2N P 150 mW/Total D Power dissipation *1 *3 IMZ2A P 300 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50A -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E I Collector cut-off current V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/11 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs
