X-On Electronics has gained recognition as a prominent supplier of K4B4G1646E-BYMA 4Gb DRAM across the USA, India, Europe, Australia, and various other global locations. K4B4G1646E-BYMA 4Gb DRAM are a product manufactured by Samsung. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

K4B4G1646E-BYMA 4Gb Samsung

K4B4G1646E-BYMA 4Gb electronic component of Samsung
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See Product Specifications
Part No.K4B4G1646E-BYMA 4Gb
Manufacturer: Samsung
Category: DRAM
Description: FBGA-96 DDR SDRAM ROHS
Datasheet: K4B4G1646E-BYMA 4Gb Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6729 ea
Line Total: USD 1.67 
Availability - 839
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
839
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.6729
10 : USD 1.4289
30 : USD 1.2748
112 : USD 1.119
448 : USD 1.0477
1008 : USD 1.0157

   
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We are delighted to provide the K4B4G1646E-BYMA 4Gb from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the K4B4G1646E-BYMA 4Gb and other electronic components in the DRAM category and beyond.

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The K4B4G1646E-BYMA 4Gb with FBGA-96 is a DDR SDRAM chip manufactured by Samsung. It is compliant with RoHS requirements and is packaged in a 64-ball Fine Pitch Ball Grid Array (FBGA) package. It is suitable for use as low-power, high-speed memory. The chip contains 4 Gigabits (Gb) of DDR SDRAM organized as a small array of 4K x16 banks that makes 4 million (4M) cells of 8 bits. The chip is optimized to offer reliable operation at maximum speed and at low power operation at maximum speed for low-profile applications such as laptop computer memories. The operating frequency is up to 800MHz with I/O voltage of 1.8V. It is made with advanced process and design techniques, with error correction capability, that allows for improved signal integrity and longer life.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP
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