X-On Electronics has gained recognition as a prominent supplier of 2SA1668 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1668 Bipolar Transistors - BJT are a product manufactured by Sanken. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1668 Sanken

2SA1668 electronic component of Sanken
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See Product Specifications
Part No.2SA1668
Manufacturer: Sanken
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 200 V 2 A 20MHz 25 W Through Hole TO-220F
Datasheet: 2SA1668 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.355 ea
Line Total: USD 4.36

Availability - 11
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
21
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 4.355
3 : USD 3.926
6 : USD 3.003
16 : USD 2.834

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Frequency
Power Dissipation
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We are delighted to provide the 2SA1668 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1668 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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1ms 5ms 20ms With Infinite heatsink DC 100x2 0.5A 1A Typ 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application : TV Vertical Output, Audio Output Driver and General Purpose n Absolute maximum ratings (Ta=25C) (Ta=25C) n Electrical Characteristics External Dimensions FM20 (TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SA1667 2SA1668 0.2 2SA1667 2SA1668 0.2 4.2 10.1 c 0.5 2.8 VCBO 150 200 V 10max 10max m A ICBO VCEO 150 200 V VCB= 150 200 V VEBO 6 V IEBO VEB=6V 10max m A 3.30.2 a IC 2 A V(BR)CEO IC=25mA 150min 200min V b IB 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25C) W VCE(sat) IC=0.7A, IB=0.07A 1.0max V 0.15 1.35 Tj 150 C fT VCE=12V, IE=0.2A 20typ MHz 1.350.15 Tstg 55 to +150 COB VCB=10V, f=1MHz C 60typ pF +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2 2.54 2.54 n Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. BEC 20 20 1 10 5 100 100 0.4typ 1.5typ 0.5typ b. Lot No. I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=10V) 2.0 3 2 1.6 1.6 2 1.2 1.2 0.8 0.8 1 0.4 0.4 I C=2A 0 0 0 0 2 4 6 8 10 2 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=10V) (VCE=10V) 400 400 5 125C 25C 30C 100 100 1 40 30 0.5 1 10 100 1000 0.01 0.1 1 2 0.01 0.1 1 2 Collector Current I C(A) Collector Current I C(A) Time t(ms) f TIE Characteristics (Typical) Safe Operating Area (Single Pulse) PcTa Derating (VCE=12V) 50 25 5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 40 1 30 100x 20 10 0.1 Without Heatsink Natural Cooling 1.2SA1667 10 2.2SA1668 Without Heatsink 2 0.01 0 0 1 10 100 300 0.01 0.1 1 2 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 25 I B=5mA/Step Typ 150x150x2 50x50x2 1 2 50mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Collector Current I C(A) Cut-off Frequency f T(MH Z) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Collector Current I C(A) Maximum Power Dissipation P C(W) 0.3 13.0min 16.9 0.2 8.4 3.9 0.2 0.80.2 0.2 4.0X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by Sanken manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H MJ15024/WS MJ15025/WS BC546/116 BC556/FSC BC557/116 BSW67A HN7G01FU-A(T5L,F,T NJVMJD148T4G NSVMMBT6520LT1G NTE187A NTE195A NTE2302 NTE2330 NTE2353 NTE316 IMX9T110 NTE63 NTE65 C4460 SBC846BLT3G 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA1727TLP 2SA2126-E 2SB1202T-TL-E 2SB1204S-TL-E 2SC5488A- TL-H 2SD2150T100R SP000011176 FMC5AT148 2N2369ADCSM 2SB1202S-TL-E 2SC2412KT146S 2SC4618TLN 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E BC557B TTC012(Q) BULD128DT4 JANTX2N3810 Jantx2N5416 US6T6TR KSF350 068071B

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Sanken Electric
Sanken Electric Company, Ltd.

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