Product Information

JANS2N2907A

JANS2N2907A electronic component of Semicoa

Datasheet
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18

Manufacturer: Semicoa
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

17: USD 31.4742 ea
Line Total: USD 535.06

16 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 17  Multiples: 17
Pack Size: 17
Availability Price Quantity
16 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 17
Multiples : 17

Stock Image

JANS2N2907A
Semicoa

17 : USD 31.4742

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Brand
Collector Current Dc
Collector-Emitter Voltage
Power Dissipation
Operating Temp Range
Pin Count
Dc Current Gain
Category
Collector-Base Voltage
Emitter-Base Voltage
Package Type
Number Of Elements
Operating Temperature Classification
Rad Hardened
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 60 Vdc CEO Collector-Base Voltage V 60 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current I 600 mAdc C Total Power Dissipation T = +25C P 0.5 W A T TO-18 (TO-206AA) 2N2906A, 2N2907A Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage 4 PIN V 60 Vdc (BR)CEO I = 10mAdc 2N2906AUA, 2N2907AUA C Collector-Base Cutoff Current V = 60Vdc I 10 Adc CB CBO V = 50Vdc 10 Adc CB Emitter-Base Cutoff Current V = 4.0Vdc I 50 Adc EB EBO V = 5.0Vdc 10 Adc EB Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) T4-LDS-0059 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (4) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 75 I = 1.0mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 175 C CE 2N2907A, L, UA, UB, UBC 100 450 I = 10mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 h C CE FE 2N2907A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 120 C CE 2N2907A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 50 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc 0.4 CE(sat) C B I = 500mAdc, I = 50mAdc 1.6 C B Base-Emitter Saturation Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.3 C B I = 500mAdc, I = 50mAdc 2.6 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 100 Magnitude of SmallSignal Forward Current Transfer Ratio h fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.0 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 30 pF ibo V = 2.0Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 45 s on V = 30Vdc I = 150mAdc I = 50mAdc CC C B1 Turn-Off Time t 300 s off V = 30Vdc I = 150mAdc I = -I = 50mAdc CC C B1 B2 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0059 Rev. 2 (100247) Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Semicoa Semiconductors

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