X-On Electronics has gained recognition as a prominent supplier of JANS2N2907A bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. JANS2N2907A bipolar transistors - bjt are a product manufactured by Semicoa. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

JANS2N2907A Semicoa

JANS2N2907A electronic component of Semicoa
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See Product Specifications
Part No.JANS2N2907A
Manufacturer: Semicoa
Category:Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.6A 3-Pin TO-18
Datasheet: JANS2N2907A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

17: USD 32.4733 ea
Line Total: USD 552.05

Availability - 16
Ships to you between
Wed. 05 Jun to Tue. 11 Jun
MOQ: 17  Multiples: 17
Pack Size: 17
Availability Price Quantity
16 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 17
Multiples : 17
17 : USD 31.4742

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Brand
Collector Current Dc
Collector-Emitter Voltage
Power Dissipation
Operating Temp Range
Pin Count
Dc Current Gain
Category
Collector-Base Voltage
Emitter-Base Voltage
Package Type
Number Of Elements
Operating Temperature Classification
Rad Hardened
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We are delighted to provide the JANS2N2907A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANS2N2907A and other electronic components in the Bipolar Transistors - BJT category and beyond.

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 60 Vdc CEO Collector-Base Voltage V 60 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current I 600 mAdc C Total Power Dissipation T = +25C P 0.5 W A T TO-18 (TO-206AA) 2N2906A, 2N2907A Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage 4 PIN V 60 Vdc (BR)CEO I = 10mAdc 2N2906AUA, 2N2907AUA C Collector-Base Cutoff Current V = 60Vdc I 10 Adc CB CBO V = 50Vdc 10 Adc CB Emitter-Base Cutoff Current V = 4.0Vdc I 50 Adc EB EBO V = 5.0Vdc 10 Adc EB Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) T4-LDS-0059 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (4) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 75 I = 1.0mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 175 C CE 2N2907A, L, UA, UB, UBC 100 450 I = 10mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 h C CE FE 2N2907A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 120 C CE 2N2907A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 50 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc 0.4 CE(sat) C B I = 500mAdc, I = 50mAdc 1.6 C B Base-Emitter Saturation Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.3 C B I = 500mAdc, I = 50mAdc 2.6 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 100 Magnitude of SmallSignal Forward Current Transfer Ratio h fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.0 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 30 pF ibo V = 2.0Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 45 s on V = 30Vdc I = 150mAdc I = 50mAdc CC C B1 Turn-Off Time t 300 s off V = 30Vdc I = 150mAdc I = -I = 50mAdc CC C B1 B2 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0059 Rev. 2 (100247) Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Semicoa Semiconductors

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