TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES LEVELS
2N2369A 2N2369AUB 2N4449 JAN
2N2369AU 2N2369AUBC * JANTX
2N2369AUA JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted)
C
Parameters / Test Conditions Symbol Value Unit
2N2369A / U / UA 15
Collector-Emitter Voltage V Vdc
CEO
2N4449 / UB / UBC 20
2N2369A / U / UA 4.5
TO-18 (TO-206AA)
Emitter-Base Voltage V Vdc
EBO
2N4449 / UB / UBC 6.0
2N2369A
Collector-Base Voltage V 40 Vdc
CBO
Collector-Emitter Voltage I 40 Vdc
CES
(1)
Total Power Dissipation @ 2N2369A; 2N4449 0.36
(1, 5)
T = +25C UA, UB, UBC P 0.36 W
A T
(4)
U 0.50
TO-46 (TO-206AB)
Operating & Storage Junction Temperature Range T , T -65 to +200 C
op stg 2N4449
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449 400
C/W
R
JA
(5)
UA, UB, UBC 400 SURFACE MOUNT
U 350 UA
Note:
1. Derate linearly 2.06 mW/C above T = +25C.
A
2. Derate linearly 4.76 mW/C above T = +95C.
C
3. Derate linearly 3.08 mW/C above T = +70C.
C
4. Derate linearly 3.44 mW/C above T = +54.5C.
A
5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
SURFACE MOUNT
UB & UBC
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A (UBC = Ceramic Lid Version)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V 15 Vdc
(BR)CEO
I = 10mAdc
C
SURFACE MOUNT
Collector-Base Cutoff Current
U (Dual Transistor)
I 0.4 Adc
CES
V = 20Vdc
CE
T4-LDS-0057 Rev. 2 (081394) Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
V = 4.5Vdc 10
EB
I Adc
EBO
Emitter-Base Cutoff Current
V = 4.0Vdc 0.25
EB
Collector- Base Breakdown Voltage
V = 40Vdc 10
CB
I Adc
CBO
Collector-Base Cutoff Current
V = 32Vdc 0.2
CB
(1)
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I = 10mAdc, V = 0.35Vdc 40 120
C CE
h
FE
I = 30mAdc, V = 0.4Vdc 30 120
C CE
I = 10mAdc, V = 1.0Vdc 40 120
C CE
I = 100mAdc, V = 1.0Vdc 20 120
C CE
Collector-Emitter Saturation Voltage
I = 10mAdc, I = 1.0mAdc 0.20
C B
V Vdc
CE(sat)
I = 30mAdc, I = 3.0mAdc 0.25
C B
I = 100mAdc, I = 10mAdc 0.45
C B
Base-Emitter Saturation Voltage
I = 10mAdc, I = 1.0mAdc 0.70 0.85
C B
V Vdc
BE(sat)
I = 30mAdc, I = 3.0mAdc 0.90
C B
I = 100mAdc, I = 10mAdc 0.80 1.20
C B
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
|h| 5.0 10
fe
I = 10mAdc, V = 10Vdc, f = 100MHz
C CE
Output Capacitance
C 4.0 pF
obo
V = 5.0Vdc, I = 0, 100kHz f 1.0MHz
CB E
Input Capacitance
C 5.0 pF
ibo
V = 0.5Vdc, I = 0, 100kHz f 1.0MHz
EB C
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
t 12
s
on
I = 10mAdc; I = 3.0mAdc, I = -1.5mAdc
C B1 B2
Turn-Off Time
t 18 s
off
I = 10mAdc; I = 3.0mAdc, I = -1.5mAdc
C B1 B2
Charge Storage Time
t 13 s
S
I = 10mAdc; I = 10mAdc, I = 10mAdc
C B1 B2
(1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
T4-LDS-0057 Rev. 2 (081394) Page 2 of 2