X-On Electronics has gained recognition as a prominent supplier of JANTX2N2907AUB Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTX2N2907AUB Bipolar Transistors - BJT are a product manufactured by Semicoa. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANTX2N2907AUB Semicoa

JANTX2N2907AUB electronic component of Semicoa
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Part No.JANTX2N2907AUB
Manufacturer: Semicoa
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.6A 3-Pin CSOT-23
Datasheet: JANTX2N2907AUB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.32 ea
Line Total: USD 8.32 
Availability - 4
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5
Multiples : 1
5 : USD 8.32

4
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 8.32

   
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INCH-POUND The documentation and process conversion measures MIL-PRF-19500/291W necessary to comply with this document shall be 17 May 2016 completed by 17 August 2016. SUPERSEDING MIL-PRF-19500/291V 16 October 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2907A, JAN, JANTX, JANTXV, JANS, JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance(JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance (RHA) level designators M, D, P, L R, F, G, and H are appended to the device prefix to identify devices which have passed RHA requirements. * 1.2 Physical dimensions. The device packages for the encapsulated device types are as follows: (2N2906A) (similar to a TO-18) in accordance with figure 1,(2N2907AUA) UA in accordance with figure 2, (2N2906AUB) in accordance with figure 3 UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin, isolated metal lid), and UBCN (3-pin, isolated ceramic lid). The dimensions and topography for JANHC and JANKC unencapsulated die is as follows: The B version die in accordance with figure 4, and D version die in accordance with 5 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified T = +25C. A Types I V V V T and T C CBO EBO CEO J STG mA dc V dc V dc V dc C All devices -600 -60 -5 -60 -65 to +200 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/291W 1.3 Maximum ratings. Unless otherwise specified T = +25C. - Continued. A Types P P P P R R R JA JC JSP(IS) R T T T T JSP(AM) (2) (3) (2) (2) (3) (2) (3) T = +25C T = +25C T = +25C T = A C SP(IS) SP(AM) (3) (1) (2) (1) (2) (1) (2) +25C (1) (2) W W W W C/W C/W C/W C/W 2N2906A, L, 0.5 1.0 N/A N/A 325 150 N/A N/A 2N2907A, L 0.5 1.0 N/A N/A 325 150 N/A N/A 2N2906AUA, (4) 0.5 N/A 1.0 1.5 (4) 325 N/A 110 40 2N2907AUA (4) 0.5 N/A 1.0 1.5 (4) 325 N/A 110 40 2N2906AUB, (4)0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBN 2N2907AUB (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBN 2N2906AUBC (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBCN 2N2907AUBC (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBCN (1) For derating, see figures 6, 7, 8, 9, and 10. (2) See 3.3 for abbreviations. (3) For thermal curves, see figures 11, 12, 13, 14, and 15. (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6 and 11 for the UA, UB,, UBC, UBN, and UBCN package and use R . JA 1.4 Primary electrical characteristics. Unless otherwise specified T = +25C. A h at V = -10 V dc FE CE h h h h (1) h (1) FE1 FE2 FE3 FE4 FE5 I = -0.1 mA dc I = -1.0 mA dc I = -10 mA dc I = -150 mA dc I = -500 mA dc C C C C C 2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A L, L, UA,UB, L, UA,UB, , L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, UA,UB, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN Min 40 75 40 100 40 100 40 100 40 50 Max 175 450 120 300 Switching (saturated) Types Limit |h | C t t fe obo on off See figure 16 See figure 17 f = 100 MHz V = -20 V dc, 100 kHz f 1 MHz CE V = -10 V dc, I = 0 I = -20 mA dc CB E C pF ns ns 2N2906A, 2N2907A, L, UA, UB, UBC, Min 2.0 UBN, UBCN Max 8 45 300 Types Limits V (1) V (1) V (1) V (1) CE(sat)1 CE(sat)2 BE(sat)1 BE(sat)2 I = -150 mA dc I = -500 mA dc I = -150 mA dc I = -500 mA dc C C C C I = -15 mA dc I = -50 mA dc I = -15 mA dc I = -50 mA dc B B B B 2N2906A, 2N2907A, V dc V dc V dc V dc L, UA, UB, UBC Min -0.6 UBN, UBCN Max -0.4 -1.6 -1.3 -2.6 (1) Pulsed see 4.5.1. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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