INCH-POUND
The documentation and process conversion measures
MIL-PRF-19500/291W
necessary to comply with this document shall be
17 May 2016
completed by 17 August 2016.
SUPERSEDING
MIL-PRF-19500/291V
16 October 2014
PERFORMANCE SPECIFICATION SHEET
* TRANSISTOR, PNP, SILICON, SWITCHING,
TYPES 2N2906A, 2N2907A,
JAN, JANTX, JANTXV, JANS, JANHC, JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four
levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as
specified in MIL-PRF-19500 and two levels of product assurance(JANHC and JANKC) are provided for each
unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided
for JANTXV, JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance (RHA) level
designators M, D, P, L R, F, G, and H are appended to the device prefix to identify devices which have
passed RHA requirements.
* 1.2 Physical dimensions. The device packages for the encapsulated device types are as follows: (2N2906A)
(similar to a TO-18) in accordance with figure 1,(2N2907AUA) UA in accordance with figure 2, (2N2906AUB) in
accordance with figure 3 UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to
fourth pad), UBN (3-pin, isolated metal lid), and UBCN (3-pin, isolated ceramic lid). The dimensions and topography
for JANHC and JANKC unencapsulated die is as follows: The B version die in accordance with figure 4, and D
version die in accordance with 5 (JANHC and JANKC).
1.3 Maximum ratings. Unless otherwise specified T = +25C.
A
Types
I V V V T and T
C CBO EBO CEO J STG
mA dc V dc V dc V dc
C
All devices -600 -60 -5 -60
-65 to +200
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at MIL-PRF-19500/291W
1.3 Maximum ratings. Unless otherwise specified T = +25C. - Continued.
A
Types
P P P P R R R
JA JC JSP(IS) R
T T T T
JSP(AM)
(2) (3) (2) (2) (3) (2) (3)
T = +25C T = +25C T = +25C T =
A C SP(IS) SP(AM)
(3)
(1) (2) (1) (2) (1) (2)
+25C (1) (2)
W W W W
C/W C/W C/W C/W
2N2906A, L, 0.5 1.0 N/A N/A 325 150 N/A N/A
2N2907A, L 0.5 1.0 N/A N/A 325 150 N/A N/A
2N2906AUA, (4) 0.5 N/A 1.0 1.5 (4) 325 N/A 110 40
2N2907AUA (4) 0.5 N/A 1.0 1.5 (4) 325 N/A 110 40
2N2906AUB, (4)0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A
and UBN
2N2907AUB (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A
and UBN
2N2906AUBC (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A
and UBCN
2N2907AUBC (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A
and UBCN
(1) For derating, see figures 6, 7, 8, 9, and 10.
(2) See 3.3 for abbreviations.
(3) For thermal curves, see figures 11, 12, 13, 14, and 15.
(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6
and 11 for the UA, UB,, UBC, UBN, and UBCN package and use R .
JA
1.4 Primary electrical characteristics. Unless otherwise specified T = +25C.
A
h at V = -10 V dc
FE CE
h h h h (1) h (1)
FE1 FE2 FE3 FE4 FE5
I = -0.1 mA dc I = -1.0 mA dc I = -10 mA dc I = -150 mA dc I = -500 mA dc
C C C C C
2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A L,
L, UA,UB, L, UA,UB, , L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, UA,UB,
UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN,
UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN
Min 40 75 40 100 40 100 40 100 40 50
Max 175 450 120 300
Switching (saturated)
Types Limit
|h | C t t
fe obo on off
See figure 16 See figure 17
f = 100 MHz V = -20 V dc, 100 kHz f 1 MHz
CE
V = -10 V dc, I = 0
I = -20 mA dc CB E
C
pF ns ns
2N2906A,
2N2907A,
L, UA, UB, UBC, Min 2.0
UBN, UBCN Max 8 45 300
Types Limits V (1) V (1) V (1) V (1)
CE(sat)1 CE(sat)2 BE(sat)1 BE(sat)2
I = -150 mA dc I = -500 mA dc I = -150 mA dc I = -500 mA dc
C C C C
I = -15 mA dc I = -50 mA dc I = -15 mA dc I = -50 mA dc
B B B B
2N2906A, 2N2907A, V dc V dc V dc V dc
L, UA, UB, UBC Min -0.6
UBN, UBCN Max -0.4 -1.6 -1.3 -2.6
(1) Pulsed see 4.5.1.
2