INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/511J completed by 12 November 2013. 12 August 2013 SUPERSEDING MIL-PRF-19500/511H 20 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N4261, 2N4261UB, 2N4261UBC, 2N4261UBN, and 2N4261UBCN JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four levels of product assurance are provided for each encapsulated device type. Two levels for unencapsulated die as specified in MIL-PRF-19500. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices which have passed RHA requirements. * 1.2 Physical dimensions. See figure 1 (TO-72), figure 2 (UB, UBC, UBN, and UBCN), and figure 3 (JANHC, JANKC). 1.3 Maximum ratings. Unless otherwise specified, T = +25C. A P V V V I T T and T R T JA CBO CEO EBO C J J STG T = +25C (1) A mW V dc V dc V dc mA dc C/mW C C 200 0.860 15 15 4.5 30 200 -65 to +200 * (1) Derate linearly 1.16 mW/C above T = +25 C. A Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/511J 1.4 Primary electrical characteristics. Unless otherwise specified, T = +25 C. A h h Switching (1) (1) h h FE1 FE2 (1) r C FE3 fe2 b c V = 1.0 V dc V = 1.0 V dc V = 1.0 V dc V = 10 V dc V = 4.0 V dc CE CE CE CE CE t t I = 30 mA dc on I = 1 mA dc I = 10 mA dc I = 10 mA dc I = 5 mA dc C off C C C C f = 100 MHz f = 31.8 MHz ps ns ns Min 25 30 20 20 Max 150 60 2.5 3.5 V C V V V CE(sat)1 obo CE(sat)2 BE1 BE2 I = 1 mA dc V = 4 V dc I = 10 mA dc I = 1 mA dc I = 10 mA dc C CB C C C I = 0.1 mA dc I = 1.0 mA dc V = 1 V dc V = 1 V dc I = 0 B B CE CE E 100 kHz f 1 MHz V dc V dc V dc V dc PF Min Max 0.15 0.35 0.8 1.0 2.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at