SEMiX171KH16s Absolute Maximum Ratings Symbol Conditions Values Unit Chip I T =85C 170 A T(AV) c sinus 180 T =100 C 125 A c I T =25C 5400 A TSM j 10 ms T =130 C 4800 A j 2 i t T =25C 145000 As j 10 ms T =130 C 115000 As j V 1700 V SEMiX 1s RSM V 1600 V RRM V 1600 V DRM (di/dt) T = 130 C 200 A/s cr j (dv/dt) T = 130 C 1000 V/s cr j Rectifier Thyr./Diode Module T -40 ... 130 C j SEMiX171KH16s Module T -40 ... 125 C stg V 1min 4000 V Features isol AC sinus 50Hz 1s 4800 V Terminal height 17 mm Chips soldered directly to isolated substrate Characteristics Symbol Conditions min. typ. max. Unit Typical Applications* Chip Input Bridge Rectifier for AC/DC motor V T =25C, I = 500 A 1.6 V j T T control V T = 130 C 0.85 V j T(TO) Power supply r T = 130 C 1.5 m j T I I T =130 C, V = V V = V 60 mA DD RD j DD DRM RD RRM t T =25C, I =1 A, di /dt = 1 A/s 1s j G G gd t V = 0.67 * V 2s gr D DRM t T = 130 C 150 s j q I T =25C 150 400 mA j H I T =25C, R =33 300 1000 mA j G L V T =25C, d.c. 2V j GT I T =25C, d.c. 150 mA j GT V T = 130 C, d.c. 0.25 V j GD I T = 130 C, d.c. 10 mA j GD R per thyristor K/W th(j-c) continuous DC per module K/W R per thyristor 0.18 K/W th(j-c) sin. 180 per module 0.18 K/W R per thyristor K/W th(j-c) per module K/W Module R per chip K/W th(c-s) per module 0.075 K/W M to heat sink (M5) 3 5 Nm s M to terminals (M6) 2.5 5 Nm t a 5 * 9,81 m/s w145g KH by SEMIKRON Rev. 2 13.12.2012 1SEMiX171KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state Fig. 1R: Power dissipation per thyristor/diode vs. current ambient temperature Fig. 2R: Power dissipation of one module vs. case Fig. 2L: Power dissipation of one module vs. rms current temperature Fig. 3L: Power dissipation of two modules vs. direct Fig. 3R: Power dissipation of two modules vs. case current temperature 2 Rev. 2 13.12.2012 by SEMIKRON