SEMIX402GAL066HDS Semikron

SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 600 V CES j I T =25C 502 A C c T = 175 C j T =80C 379 A c I 400 A Cnom I I = 2xI 800 A CRM CRM Cnom V -20 ... 20 V GES V = 360 V CC SEMiX 2s t V 15 V T =150 C 6s psc GE j V 600 V CES T -40 ... 175 C j Trench IGBT Modules Inverse diode I T =25C 543 A F c T = 175 C j SEMiX402GAL066HDs T =80C 397 A c I 400 A Fnom I I = 2xI 800 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 1800 A FSM p j Homogeneous Si T -40 ... 175 C j Trench = Trenchgate technology Freewheeling diode V with positive temperature CE(sat) coefficient I T =25C 566 A c F T = 175 C j UL recognised file no. E63532 T =80C 412 A c I 400 A Typical Applications* Fnom I I = 2xI 800 A FRM FRM Fnom Matrix Converter I t = 10 ms, sin 180, T =25C 1800 A p j FSM Resonant Inverter T -40 ... 175 C j Current Source Inverter Module Remarks I T =80 C 600 A t(RMS) terminal Case temperature limited to T =125C C T -40 ... 125 C stg max. V AC sinus 50Hz, t = 1 min 4000 V isol Product reliability results are valid for T =150C j Characteristics For short circuit: Soft R Goff recommended Symbol Conditions min. typ. max. Unit Take care of over-voltage caused by IGBT stray inductance I =400A V C T =25C 1.45 1.85 V CE(sat) j V =15V GE T =150 C 1.7 2.1 V j chiplevel V T =25C 0.9 1 V j CE0 T =150 C 0.85 0.9 V j r T =25C 1.4 2.1 m j CE V =15V GE T =150 C 2.1 3.0 m j V V =V , I = 6.4 mA 5 5.8 6.5 V GE(th) GE CE C I T =25 C 0.15 0.45 mA V =0 V j CES GE V = 600 V CE T =150 C mA j C f=1MHz 24.7 nF ies V =25V CE C f=1MHz 1.54 nF oes V =0 V GE C f=1MHz 0.73 nF res Q V = - 8 V...+ 15 V 3200 nC GE G R T =25C 1.00 j Gint GAL by SEMIKRON Rev. 1 13.01.2012 1SEMiX402GAL066HDs Characteristics Symbol Conditions min. typ. max. Unit V = 300 V t CC T =150 C 150 ns j d(on) I =400A C t T =150 C 125 ns j r V =15V GE E T =150 C 22 mJ j on R =4.5 G on t T =150 C 900 ns j d(off) R =4.5 G off t T =150 C 65 ns j f E T =150 C 24 mJ j off R per IGBT 0.12 K/W th(j-c) SEMiX 2s Inverse diode I = 400 A V = V F T =25C 1.4 1.60 V F EC j V =0V GE T =150 C Trench IGBT Modules 1.4 1.6 V j chip V T =25C 0.9 1 1.1 V j F0 T =150 C 0.75 0.85 0.95 V j SEMiX402GAL066HDs r T =25C 0.8 1.0 1.3 m j F T =150 C 1.1 1.4 1.6 m j I = 400 A I F T =150 C 250 A j RRM Features di/dt =3700A/s off Q T =150 C 47 C j rr Homogeneous Si V =-8V GE Trench = Trenchgate technology E T =150 C 10 mJ rr j V = 300 V CC V with positive temperature CE(sat) R per diode 0.15 K/W th(j-c) coefficient Freewheeling diode UL recognised file no. E63532 I = 400 A V = V F T =25C 1.3 1.53 V F EC j Typical Applications* V =0V GE T =150 C 1.3 1.5 V j chip Matrix Converter V T =25C 0.9 1 1.1 V j F0 Resonant Inverter T =150 C 0.75 0.85 0.95 V j Current Source Inverter r T =25C 0.7 0.9 1.1 m j F Remarks T =150 C 1.0 1.2 1.4 m j Case temperature limited to T =125C C I = 400 A I F T =150 C 250 A j RRM max. di/dt =3700A/s off Q T =150 C 47 C j rr Product reliability results are valid for V =-8V GE E T =150 C 10 mJ rr j T =150C V = 300 V j CC For short circuit: Soft R Goff R per diode 0.15 K/W th(j-c) recommended Module Take care of over-voltage caused by L 18 nH CE stray inductance R T =25C 0.7 m CC +EE C res., terminal-chip T =125 C 1m C R per module 0.045 K/W th(c-s) M to heat sink (M5) 3 5 Nm s M to terminals (M6) 2.5 5 Nm t Nm w 250 g Temperatur Sensor R T =100C (R =5 k ) 493 5% 100 c 25 3550 B R =R exp B (1/T-1/T ) T K K 100/125 (T) 100 100/125 100 2% GAL 2 Rev. 1 13.01.2012 by SEMIKRON