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X-On Electronics has gained recognition as a prominent supplier of SKM195GB126D IGBT Modules across the USA, India, Europe, Australia, and various other global locations. SKM195GB126D IGBT Modules are a product manufactured by Semikron. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

SKM195GB126D Semikron

SKM195GB126D electronic component of Semikron
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See Product Specifications
Part No.SKM195GB126D
Manufacturer: Semikron
Category: IGBT Modules
Description: IGBT half-bridge; Urmax:1.2kV; Ic:150A; Ifsm:300A; SEMITRANS2
Datasheet: SKM195GB126D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 164.08 ea
Line Total: USD 164.08 
Availability - 11
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 164.08
8 : USD 157.78

   
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Electrical Mounting
Topology
Type Of Module
Max Forward Impulse Current
Max Off-State Voltage
Collector Current
Gate-Emitter Voltage
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SKM195GB126D from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKM195GB126D and other electronic components in the IGBT Modules category and beyond.

Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Image Part-Description
Stock Image SKM300GA12T4
Urmax:1.2kV; Ic:300A; Ifsm:900A; SEMITRANS4; V: D59; screw; screw
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SKM 300GAL12E4
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Stock Image SKM 400GAL12E4
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Stock Image SKM 400GB125D
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SKM50GB12T4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SKM75GB17E4
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SKM195GB126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 220 A C c T = 150 C j T =80C 164 A c I 150 A Cnom I I = 2xI 300 A CRM CRM Cnom V -20 ... 20 V GES V = 600 V CC SEMITRANS 2 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -40 ... 150 C j Trench IGBT Modules Inverse diode I T =25C 143 A F c T = 150 C j SKM195GB126D T =80C 98 A c I 100 A Fnom I I = 2xI 200 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 1110 A FSM p j Trench = Trenchgate technology T -40 ... 150 C j V with positive temperature CE(sat) Module coefficient High short circuit capability, self limiting I 200 A t(RMS) to 6 x I C T -40 ... 125 C stg UL recognized, file no. E63532 V AC sinus 50 Hz, t = 1 min 4000 V isol Typical Applications* Characteristics AC inverter drives Symbol Conditions min. typ. max. Unit UPS IGBT Electronic welders I =150A V C T =25C 1.71 2.10 V j CE(sat) V =15V GE T =125 C 2.00 2.45 V j chiplevel V T =25C 11.2 V CE0 j chiplevel T =125 C 0.9 1.1 V j r T =25C 4.7 6 m CE V =15V j GE chiplevel T =125 C 7.3 9 m j V V =V , I =6 mA 5 5.8 6.5 V GE(th) GE CE C I T =25C 2mA CES V =0V j GE V = 1200 V CE T =125 C mA j C f=1MHz 10.8 nF ies V =25V CE C f=1MHz 0.56 nF oes V =0V GE C f=1MHz 0.49 nF res Q V = - 8 V...+ 20 V 1380 nC G GE R T =25C 5 Gint j V = 600 V t CC T =125 C 280 ns d(on) j I =150A C t T =125 C 50 ns r j V = +15/-15 V GE E T =125 C 16 mJ on j R =2 G on t T =125 C 560 ns d(off) R =2 j G off t T =125 C 70 ns f j E T =125 C 24.5 mJ off j R per IGBT 0.16 K/W th(j-c) GB by SEMIKRON Rev. 1.0 20.07.2015 1SKM195GB126D Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 100 A V = V F T =25C 2.00 2.50 V F EC j V =0V GE T =125 C 1.80 2.30 V j chiplevel V T =25C 1.1 1.45 V j F0 chiplevel T =125 C 0.85 1.2 V j r T =25C 911 m j F chiplevel T =125 C 9.5 11 m j SEMITRANS 2 I = 100 A I F T =125 C 86 A j RRM di/dt =2200A/s off Q T =125 C 17 C j rr V =-15V GE E T =125 C 5.8 mJ rr j Trench IGBT Modules V = 600 V CC R per diode 0.32 K/W th(j-c) Module SKM195GB126D L 30 nH CE R T =25C 0.75 m CC +EE C terminal-chip T =125C 1m C Features R per module 0.04 0.05 K/W th(c-s) Trench = Trenchgate technology M to heat sink M6 3 5 Nm s V with positive temperature CE(sat) coefficient M to terminals M5 2.5 5 Nm t High short circuit capability, self limiting Nm to 6 x I C w 160 g UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders GB 2 Rev. 1.0 20.07.2015 by SEMIKRON

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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