SKM195GB126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 220 A C c T = 150 C j T =80C 164 A c I 150 A Cnom I I = 2xI 300 A CRM CRM Cnom V -20 ... 20 V GES V = 600 V CC SEMITRANS 2 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -40 ... 150 C j Trench IGBT Modules Inverse diode I T =25C 143 A F c T = 150 C j SKM195GB126D T =80C 98 A c I 100 A Fnom I I = 2xI 200 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 1110 A FSM p j Trench = Trenchgate technology T -40 ... 150 C j V with positive temperature CE(sat) Module coefficient High short circuit capability, self limiting I 200 A t(RMS) to 6 x I C T -40 ... 125 C stg UL recognized, file no. E63532 V AC sinus 50 Hz, t = 1 min 4000 V isol Typical Applications* Characteristics AC inverter drives Symbol Conditions min. typ. max. Unit UPS IGBT Electronic welders I =150A V C T =25C 1.71 2.10 V j CE(sat) V =15V GE T =125 C 2.00 2.45 V j chiplevel V T =25C 11.2 V CE0 j chiplevel T =125 C 0.9 1.1 V j r T =25C 4.7 6 m CE V =15V j GE chiplevel T =125 C 7.3 9 m j V V =V , I =6 mA 5 5.8 6.5 V GE(th) GE CE C I T =25C 2mA CES V =0V j GE V = 1200 V CE T =125 C mA j C f=1MHz 10.8 nF ies V =25V CE C f=1MHz 0.56 nF oes V =0V GE C f=1MHz 0.49 nF res Q V = - 8 V...+ 20 V 1380 nC G GE R T =25C 5 Gint j V = 600 V t CC T =125 C 280 ns d(on) j I =150A C t T =125 C 50 ns r j V = +15/-15 V GE E T =125 C 16 mJ on j R =2 G on t T =125 C 560 ns d(off) R =2 j G off t T =125 C 70 ns f j E T =125 C 24.5 mJ off j R per IGBT 0.16 K/W th(j-c) GB by SEMIKRON Rev. 1.0 20.07.2015 1SKM195GB126D Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 100 A V = V F T =25C 2.00 2.50 V F EC j V =0V GE T =125 C 1.80 2.30 V j chiplevel V T =25C 1.1 1.45 V j F0 chiplevel T =125 C 0.85 1.2 V j r T =25C 911 m j F chiplevel T =125 C 9.5 11 m j SEMITRANS 2 I = 100 A I F T =125 C 86 A j RRM di/dt =2200A/s off Q T =125 C 17 C j rr V =-15V GE E T =125 C 5.8 mJ rr j Trench IGBT Modules V = 600 V CC R per diode 0.32 K/W th(j-c) Module SKM195GB126D L 30 nH CE R T =25C 0.75 m CC +EE C terminal-chip T =125C 1m C Features R per module 0.04 0.05 K/W th(c-s) Trench = Trenchgate technology M to heat sink M6 3 5 Nm s V with positive temperature CE(sat) coefficient M to terminals M5 2.5 5 Nm t High short circuit capability, self limiting Nm to 6 x I C w 160 g UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders GB 2 Rev. 1.0 20.07.2015 by SEMIKRON