SKM200GB12E4 Semikron

SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 313 A C c T = 175 C j T =80C 241 A c I 200 A Cnom I I = 3xI 600 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC SEMITRANS 3 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j IGBT4 Modules Inverse diode I T =25C 229 A F c T = 175 C j SKM200GB12E4 T =80C 172 A c I 200 A Fnom I I = 3xI 600 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 990 A FSM p j IGBT4 = 4. generation medium fast T -40 ... 175 C j trench IGBT (Infineon) Module CAL4 = Soft switching 4. generation CAL-diode I T =80 C 500 A terminal t(RMS) Isolated copper baseplate using DBC T -40 ... 125 C stg technology (Direct Bonded Copper) V AC sinus 50 Hz, t = 1 min 4000 V isol Increased power cycling capability With integrated gate resistor Characteristics For higher switching frequenzies up to 12kHz Symbol Conditions min. typ. max. Unit UL recognized, file no. E63532 IGBT Typical Applications* I =200A V C T =25C 1.80 2.05 V j CE(sat) AC inverter drives V =15V GE T =150 C 2.20 2.40 V j UPS chiplevel V T =25C 0.8 0.9 V CE0 j Remarks chiplevel T =150 C 0.7 0.8 V j Case temperature limited r T =25C 5.00 5.75 m CE V =15V j GE to T = 125C max. c chiplevel Recommended T = -40 ... +150C T =150 C 7.50 8.00 m op j Product reliability results valid V V =V , I = 7.6 mA 5 5.8 6.5 V GE(th) GE CE C for T = 150C j I T =25C 2.7 mA CES V =0V j GE V = 1200 V CE T =150 C mA j C f=1MHz 12.3 nF ies V =25V CE C f=1MHz 0.81 nF oes V =0V GE C f=1MHz 0.69 nF res Q V = - 8 V...+ 15 V 1130 nC G GE R T =25C 3.8 Gint j V = 600 V t CC T =150 C 204 ns d(on) j I =200A C t T =150 C 40 ns r j V =15V GE E T =150 C 21 mJ on j R =1 G on t T =150 C 490 ns d(off) R =1 j G off di/dt = 5500 A/s t on T =150 C 107 ns f j di/dt =2300A/s off E T =150 C 27 mJ off j R per IGBT 0.14 K/W th(j-c) GB by SEMIKRON Rev. 3 21.08.2013 1SKM200GB12E4 Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 200 A V = V F T =25C 2.20 2.52 V F EC j V =0V GE T =150 C 2.15 2.47 V j chiplevel V T =25C 1.3 1.5 V j F0 chiplevel T =150 C 0.9 1.1 V j r T =25C 4.5 5.1 m j F chiplevel T =150 C 6.3 6.8 m j SEMITRANS 3 I = 200 A I F T =150 C 174 A j RRM di/dt =4450A/s off Q T =150 C 33 C j rr V =15V GE E T =150 C 13 mJ rr j IGBT4 Modules V = 600 V CC R per diode 0.26 K/W th(j-c) Module SKM200GB12E4 L 15 20 nH CE R T =25C 0.25 m CC +EE C terminal-chip T =125C 0.5 m C Features R per module 0.02 0.038 K/W th(c-s) IGBT4 = 4. generation medium fast M to heat sink M6 3 5 Nm s trench IGBT (Infineon) CAL4 = Soft switching 4. generation M to terminals M6 2.5 5 Nm t CAL-diode Nm Isolated copper baseplate using DBC w 325 g technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 12kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Remarks Case temperature limited to T = 125C max. c Recommended T = -40 ... +150C op Product reliability results valid for T = 150C j GB 2 Rev. 3 21.08.2013 by SEMIKRON