X-On Electronics has gained recognition as a prominent supplier of SKM200GB12T4 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. SKM200GB12T4 IGBT Modules are a product manufactured by Semikron. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

SKM200GB12T4 Semikron

SKM200GB12T4 electronic component of Semikron
SKM200GB12T4 Semikron
SKM200GB12T4 IGBT Modules
SKM200GB12T4  Semiconductors

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See Product Specifications
Part No. SKM200GB12T4
Manufacturer: Semikron
Category: IGBT Modules
Description: IGBT half-bridge; Urmax:1.2kV; Ic:241A; Ifsm:600A; SEMITRANS3
Datasheet: SKM200GB12T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 189.49 ea
Line Total: USD 189.49 
Availability - 1
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 189.49

   
Manufacturer
Product Category
Case
Version
Mounting
Semiconductor Structure
Electrical Mounting
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Max Forward Impulse Current
Max Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SKM200GB12T4 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKM200GB12T4 and other electronic components in the IGBT Modules category and beyond.

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SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 313 A C c T = 175 C j T =80C 241 A c I 200 A Cnom I I = 3xI 600 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC SEMITRANS 3 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Fast IGBT4 Modules Inverse diode I T =25C 229 A F c T = 175 C j SKM200GB12T4 T =80C 172 A c I 200 A Fnom I I = 3xI 600 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 990 A FSM p j IGBT4 = 4. generation fast trench IGBT T -40 ... 175 C j (Infineon) Module CAL4 = Soft switching 4. generation CAL-diode I T =80 C 500 A terminal t(RMS) Isolated copper baseplate using DBC T -40 ... 125 C stg technology (Direct Bonded Copper) V AC sinus 50 Hz, t = 1 min 4000 V isol Increased power cycling capability With integrated gate resistor Characteristics For higher switching frequenzies up to 20kHz Symbol Conditions min. typ. max. Unit UL recognized, file no. E63532 IGBT Typical Applications* I =200A V C T =25C 1.80 2.05 V j CE(sat) AC inverter drives V =15V GE T =150 C 2.20 2.40 V j UPS chiplevel Electronic welders at fsw up to 20 kHz V T =25C 0.8 0.9 V CE0 j chiplevel T =150 C 0.7 0.8 V j Remarks r T =25C 5.00 5.75 m CE V =15V j GE Case temperature limited chiplevel to T = 125C max. T =150 C 7.50 8.00 m c j Recommended T = -40 ... +150C op V V =V , I = 7.6 mA 5 5.8 6.5 V GE(th) GE CE C Product reliability results valid I T =25C 2.7 mA CES V =0V j GE for T = 150C j V = 1200 V CE T =150 C mA j C f=1MHz 12.3 nF ies V =25V CE C f=1MHz 0.81 nF oes V =0V GE C f=1MHz 0.69 nF res Q V = - 8 V...+ 15 V 1130 nC G GE R T =25C 3.8 Gint j V = 600 V t CC T =150 C 185 ns d(on) j I =200A C t T =150 C 40 ns r j V =15V GE E T =150 C 21 mJ on j R =1 G on t T =150 C 425 ns d(off) R =1 j G off di/dt = 5500 A/s t on T =150 C 82 ns f j di/dt =2300A/s off E T =150 C 20 mJ off j R per IGBT 0.14 K/W th(j-c) GB by SEMIKRON Rev. 3 03.09.2013 1SKM200GB12T4 Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 200 A V = V F T =25C 2.20 2.52 V F EC j V =0V GE T =150 C 2.15 2.47 V j chiplevel V T =25C 1.3 1.5 V j F0 chiplevel T =150 C 0.9 1.1 V j r T =25C 4.5 5.1 m j F chiplevel T =150 C 6.3 6.8 m j SEMITRANS 3 I = 200 A I F T =150 C 174 A j RRM di/dt =4450A/s off Q T =150 C 33 C j rr V =15V GE E T =150 C 13 mJ rr j Fast IGBT4 Modules V = 600 V CC R per diode 0.26 K/W th(j-c) Module SKM200GB12T4 L 15 20 nH CE R T =25C 0.25 m CC +EE C terminal-chip T =125C 0.5 m C Features R per module 0.02 0.038 K/W th(c-s) IGBT4 = 4. generation fast trench IGBT M to heat sink M6 3 5 Nm s (Infineon) CAL4 = Soft switching 4. generation M to terminals M6 2.5 5 Nm t CAL-diode Nm Isolated copper baseplate using DBC w 325 g technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders at fsw up to 20 kHz Remarks Case temperature limited to T = 125C max. c Recommended T = -40 ... +150C op Product reliability results valid for T = 150C j GB 2 Rev. 3 03.09.2013 by SEMIKRON

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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