SKM100GB12T4 Semikron

SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 160 A C c T = 175 C j T =80C 123 A c I 100 A Cnom I I = 3xI 300 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC SEMITRANS 2 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Fast IGBT4 Modules Inverse diode I T =25C 121 A F c T = 175 C j SKM100GB12T4 T =80C 91 A c I 100 A Fnom I I = 3xI 300 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 550 A FSM p j IGBT4 = 4. generation fast trench IGBT T -40 ... 175 C j (Infineon) Module CAL4 = Soft switching 4. generation CAL-diode I T =80 C 200 A terminal t(RMS) Isolated copper baseplate using DBC T -40 ... 125 C stg technology (Direct Bonded Copper) V AC sinus 50 Hz, t = 1 min 4000 V isol Increased power cycling capability With integrated gate resistor Characteristics For higher switching frequenzies up to 20kHz Symbol Conditions min. typ. max. Unit UL recognized, file no. E63532 IGBT Typical Applications* I =100A V C T =25C 1.80 2.05 V j CE(sat) AC inverter drives V =15V GE T =150 C 2.20 2.40 V j UPS chiplevel Electronic welders at fsw up to 20 kHz V T =25C 0.8 0.9 V CE0 j chiplevel T =150 C 0.7 0.8 V j Remarks r T =25C 10.00 11.50 m CE V =15V j GE Case temperature limited chiplevel to T = 125C max. T =150 C 15.00 16.00 m c j Recommended T = -40 ... +150C op V V =V , I = 3.8 mA 5 5.8 6.5 V GE(th) GE CE C Product reliability results valid I T =25C 1mA CES V =0V j GE for T = 150C j V = 1200 V CE T =150 C mA j C f=1MHz 6.15 nF ies V =25V CE C f=1MHz 0.40 nF oes V =0V GE C f=1MHz 0.345 nF res Q V = - 8 V...+ 15 V 565 nC G GE R T =25C 7.5 Gint j V = 600 V t CC T =150 C 165 ns d(on) j I =100A C t T =150 C 47 ns r j V =15V GE E T =150 C 15 mJ on j R =1 G on t T =150 C 400 ns d(off) R =1 j G off di/dt = 1800 A/s t on T =150 C 75 ns f j di/dt =1130A/s off E T =150 C 10.2 mJ off j R per IGBT 0.27 K/W th(j-c) GB by SEMIKRON Rev. 1 03.09.2013 1SKM100GB12T4 Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 100 A V = V F T =25C 2.20 2.52 V F EC j V =0V GE T =150 C 2.15 2.47 V j chiplevel V T =25C 1.3 1.5 V j F0 chiplevel T =150 C 0.9 1.1 V j r T =25C 9.0 10.2 m j F chiplevel T =150 C 12.5 13.7 m j SEMITRANS 2 I = 100 A I F T =150 C 54 A j RRM di/dt =1600A/s off Q T =150 C 15.7 C j rr V =15V GE E T =150 C 5.9 mJ rr j Fast IGBT4 Modules V = 600 V CC R per diode 0.48 K/W th(j-c) Module SKM100GB12T4 L 30 nH CE R T =25C 0.65 m CC +EE C terminal-chip T =125C 1m C Features R per module 0.04 0.05 K/W th(c-s) IGBT4 = 4. generation fast trench IGBT M to heat sink M6 3 5 Nm s (Infineon) CAL4 = Soft switching 4. generation M to terminals M5 2.5 5 Nm t CAL-diode Nm Isolated copper baseplate using DBC w 160 g technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders at fsw up to 20 kHz Remarks Case temperature limited to T = 125C max. c Recommended T = -40 ... +150C op Product reliability results valid for T = 150C j GB 2 Rev. 1 03.09.2013 by SEMIKRON