Product Change Notification Product group: Power Module Rev.: 00 Release of 300mm Wafer Size for Infineon IGBT4 1200V Low No.: PCN 16-058 Power and High Speed 3 IGBT s for all Power Modules Subject of change: Release of 300mm wafer size for Infineon IGBT4 1200V Low Power and High Speed 3 IGBTs as alternative delivery form. SEMIKRON All power modules using Infineon IGBT4 1200V Low Power or High product type: Speed 3 IGBTs. For a detailed overview of products affected see the attached product listing. Description Introduction of 300mm wafer size as an alternative delivery form for of change: IGBT4 1200V Low Power and High Speed 3 IGBTs. Reason for change: Supplier is introducing the 300mm wafer size as an additional delivery form for the IGBT4 1200V Low Power and High Speed 3 IGBTs to support the worldwide demand. To ensure future continuous supply SEMIKRON is releasing this new wafer size as alternative delivery format for all power modules using this IGBT technology. Identification The product part number and description will remain unchanged, the of change: changed product can be identified via the product date code. Time schedule 01.12.2016 for change: Supporting Availability on request documentation: Author: Werner Obermaier Please respond to this PCN by returning the attached customer approval form to your local sales partner. According to the IEC Standard JESD46 no response to this PCN within 30 days after receipt constitutes acceptance of the change. 17. August 2016 Page 1 of 9 PROMGT.1005 / Rev. 08 Qualification Plan: No. Test IGBT4 1200V LoPo 300mm Wafer* 1 Dynamic characteristics PASSED E , E , dV /dt, t , t , t , t T=25C/150C ( /3) on off CE d(on) d(off) r f 2 Short-circuit Safe Operating Test: PASSED ( /2) V =800V T=25C/150C t =10s DC sc 3 High temperature storage ** Nov. 2016 T=150C t=1000h ( /3) 4 Low temperature storage ** Nov. 2016 T=-40C t=1000h ( /2) 5 Thermal cycling ** Dec. 2016 500 cycles T=-50C ... 150C ( /2) 6 High temperature reverse bias (HTRB) ** Nov. 2016 T =95% T V =95% V =1140V t=1000h ( /20) vjmax jmax CE CEnom 7 High temperature gate stress (HTGS) ** Nov. 2016 T =175C V =+/-20V t=1000h ( /4) vjmax GE 8 Power cycling Dec. 2016 ( /4) DT=70K DC T =80C jmin 9 High temperature, high humidity reverse bias (H3TRB) ** Dec. 2016 ( /20) T=85C rH=85% V =960V t=1000h CE *) quantity based on modules under test **) based on IGBT4 1200V MePo 300mm Wafer qualification 17. August 2016 Page 2 of 9 PROMGT.1005 / Rev. 08