/ Technical Information IGBT- FS50R12KT4 B15 IGBT-modules EconoPACK2 /IGBT4 NTC EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC V = 1200V CES I = 50A / I = 100A C nom CRM Typical Applications Auxiliary Inverters Motor Drives Servo Drives Electrical Features VCEsat Low VCEsat IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op V CEsat VCEsat with positive Temperature Coefficient Mechanical Features Al 2O3 Al2O 3 Substrate with Low Thermal Resistance High Power and Thermal Cycling Capability NTC Integrated NTC temperature sensor Copper Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: NK date of publication: 2013-11-04 approved by: RS revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FS50R12KT4 B15 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 50 A C vj max C nom Continuous DC collector current t = 1 ms I 100 A P CRM Repetitive peak collector current T = 25C, T = 175C P 280 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 50 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 50 A, V = 15 V T = 150C 2,25 V C GE vj I = 1,60 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,38 C Gate charge T = 25C R 4,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,80 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,10 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 50 A, V = 600 V T = 25C 0,13 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 15 T = 150C 0,15 s Gon vj () I = 50 A, V = 600 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 15 T = 150C 0,035 s Gon vj () I = 50 A, V = 600 V T = 25C 0,30 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,38 s R = 15 T = 150C 0,40 s Goff vj () I = 50 A, V = 600 V T = 25C 0,045 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 15 T = 150C 0,09 s Goff vj () I = 50 A, V = 600 V, L = 25 nH T = 25C 3,60 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2000 A/s (Tvj = 150C) Tvj = 125C Eon 5,10 mJ R = 15 T = 150C 5,80 mJ Gon vj ( I = 50 A, V = 600 V, L = 25 nH T = 25C 2,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3800 V/s (Tvj = 150C)Tvj = 125C Eoff 4,10 mJ R = 15 T = 150C 4,50 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 180 A IGBT / per IGBT R 0,54 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,20 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: NK date of publication: 2013-11-04 approved by: RS revision: 3.0 2