X-On Electronics has gained recognition as a prominent supplier of BSM25GD120DN2 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. BSM25GD120DN2 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

BSM25GD120DN2 Infineon

BSM25GD120DN2 electronic component of Infineon
BSM25GD120DN2 Infineon
BSM25GD120DN2 IGBT Modules
BSM25GD120DN2  Semiconductors

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See Product Specifications
Part No. BSM25GD120DN2
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules 1200V 25A FL BRIDGE
Datasheet: BSM25GD120DN2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 245.6171
5 : USD 221.3233
10 : USD 215.2233
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 194.337
10 : USD 191.103
20 : USD 183.92
200 : USD 176.737
500 : USD 176.737
1000 : USD 176.737
2000 : USD 176.737
N/A

Obsolete
   
Manufacturer
Product Category
Package / Case
Brand
Transistor Polarity
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Ic Continuous A Max
Current Temperature
Full Power Rating Temperature
Module Configuration
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
Pulsed Current Icm
Termination Type
Voltage Vce Sat Typ
Voltage Vces
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSM25GD120DN2 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM25GD120DN2 and other electronic components in the IGBT Modules category and beyond.

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BSM 25 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type V I Package Ordering Code CE C BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 1200 V CE Collector-gate voltage V CGR R = 20 k 1200 GE Gate-emitter voltage V 20 GE DC collector current I A C T = 25 C 35 C T = 80 C 25 C Pulsed collector current, t = 1 ms I p Cpuls T = 25 C 70 C T = 80 C 50 C Power dissipation per IGBT P W tot T = 25 C 200 C Chip temperature T + 150 C j Storage temperature T -40 ... + 125 stg Thermal resistance, chip case R 0.6 K/W thJC Diode thermal resistance, chip case R 1 thJC D Insulation test voltage, t = 1min. V 2500 Vac is Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 1 2006-01-31BSM 25 GD 120 DN2 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V V GE(th) V = V I = 1 mA 4.5 5.5 6.5 GE CE, C Collector-emitter saturation voltage V CE(sat) V = 15 V, I = 25 A, T = 25 C - 2.5 3 GE C j V = 15 V, I = 25 A, T = 125 C - 3.1 3.7 GE C j Zero gate voltage collector current I mA CES V = 1200 V, V = 0 V, T = 25 C - 0.5 0.8 CE GE j V = 1200 V, V = 0 V, T = 125 C - 2 - CE GE j Gate-emitter leakage current I nA GES V = 20 V, V = 0 V - - 180 GE CE AC Characteristics Transconductance g S fs V = 20 V, I = 25 A 10 - - CE C Input capacitance C pF iss V = 25 V, V = 0 V, f = 1 MHz - 1650 - CE GE Output capacitance C oss V = 25 V, V = 0 V, f = 1 MHz - 250 - CE GE Reverse transfer capacitance C rss V = 25 V, V = 0 V, f = 1 MHz - 110 - CE GE 2 2006-01-31

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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