Technische Information / Technical Information IGBT-Module BSM50GB120DLC IGBT-Modules Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES collector-emitter voltage T = 80 C I 50 A C C,nom. Kollektor-Dauergleichstrom DC-collector current T = 25 C I 115 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80C I P C CRM 100 A repetitive peak collector current Gesamt-Verlustleistung T =25C, Transistor P 460 W C tot total power dissipation Gate-Emitter-Spitzenspannung V GES +/- 20V V gate-emitter peak voltage Dauergleichstrom I 50 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 100 A P FRM repetitive peak forw. current Grenzlastintegral der Diode 2 2 V = 0V, t = 10ms, T = 125C 430 R p Vj I t A s 2 I t - value, Diode Isolations-Prfspannung V RMS, f = 50 Hz, t = 1 min. 2,5 kV ISOL insulation test voltage Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 50A, V = 15V, T = 25C V - 2,1 2,6 V Kollektor-Emitter Sttigungsspannung C GE vj CE sat collector-emitter saturation voltage I = 50A, V = 15V, T = 125C - 2,4 2,9 V C GE vj Gate-Schwellenspannung I = 2mA, V = V , T = 25C V 4,5 5,5 6,5 V C CE GE vj GE(th) gate threshold voltage Gateladung V = -15V...+15V Q - 0,53 - C GE G gate charge Eingangskapazitt f = 1MHz,T = 25C,V = 25V, V = 0V C - 3,3 - nF vj CE GE ies input capacitance Rckwirkungskapazitt f = 1MHz,T = 25C,V = 25V, V = 0V C - 0,21 - nF vj CE GE res reverse transfer capacitance Kollektor-Emitter Reststrom V = 1200V, V = 0V, T = 25C I -- 5mA CE GE vj CES collector-emitter cut-off current Gate-Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate-emitter leakage current prepared by: MOD-D2, Mark Mnzer date of publication: 2003-01-10 approved by: SM TM Wilhelm Rusche revision: 3.0 DB BSM50GB120DLC 3.0 1(8) 2003-01-10Technische Information / Technical Information IGBT-Module BSM50GB120DLC IGBT-Modules Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 50A, V = 600V C CE Einschaltverzgerungszeit (ind. Last) turn on delay time (inductive load) V = 15V, R = 15 , T = 25C t - 0,05 - s GE G vj d,on V = 15V, R = 15 , T = 125C - 0,06 - s GE G vj I = 50A, V = 600V C CE Anstiegszeit (induktive Last) rise time (inductive load) V = 15V, R = 15 , T = 25C t - 0,05 - s GE G vj r V = 15V, R = 15 , T = 125C - 0,05 - s GE G vj I = 50A, V = 600V C CE Abschaltverzgerungszeit (ind. Last) turn off delay time (inductive load) V = 15V, R = 15 , T = 25C t - 0,25 - s GE G vj d,off V = 15V, R = 15 , T = 125C - 0,30 - s GE G vj I = 50A, V = 600V C CE Fallzeit (induktive Last) fall time (inductive load) V = 15V, R = 15 , T = 25C t - 0,03 - s GE G vj f V = 15V, R = 15 , T = 125C - 0,07 - s GE G vj I = 50A, V = 600V, V = 15V C CE GE Einschaltverlustenergie pro Puls turn-on energy loss per pulse R = 15 , T = 125C, L = 120nH E - 6,4 - mJ G vj on I = 50A, V = 600V, V = 15V C CE GE Abschaltverlustenergie pro Puls turn-off energy loss per pulse R = 15 , T = 125C, L = 120nH E - 6,2 - mJ G vj off t 10s, V 15V, R = 15 P GE G Kurzschluverhalten SC Data T 125C, V =900V, V =V -L di/dt I - 400 - A Vj CC CEmax CES CE SC Modulinduktivitt L - 40 - nH CE stray inductance module Modul Leitungswiderstand, Anschlsse Chip T =25C R - 1,0 - m C CC+EE module lead resistance, terminals chip Charakteristische Werte / Characteristic values min. typ. max. Diode / Diode I = 50A, V = 0V, T = 25C V - 1,8 2,3 V Durchlaspannung F GE vj F forward voltage I = 50A, V = 0V, T = 125C - 1,7 2,2 V F GE vj I = 50A, - di /dt = 1300A/s Rckstromspitze F F peak reverse recovery current V = 600V, V = -15V, T = 25C I -52 - A R GE vj RM V = 600V, V = -15V, T = 125C -66 - A R GE vj I = 50A, - di /dt = 1300A/s Sperrverzgerungsladung F F recovered charge V = 600V, V = -15V, T = 25C Q - 5,1 - C R GE vj r V = 600V, V = -15V, T = 125C - 10,7 - C R GE vj I = 50A, - di /dt = 1300A/s F F Abschaltenergie pro Puls reverse recovery energy V = 600V, V = -15V, T = 25C E R GE vj rec - 1,9 - mJ V = 600V, V = -15V, T = 125C -4 - mJ R GE vj DB BSM50GB120DLC 3.0 2(8) 2003-01-10