SKM100GB12T4G Semikron

SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 154 A C c T = 175 C j T =80C 118 A c I 100 A Cnom I I = 3xI 300 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC SEMITRANS 3 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Fast IGBT4 Modules Inverse diode I T =25C 118 A F c T = 175 C j SKM100GB12T4G T =80C 89 A c I 100 A Fnom I I = 3xI 300 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 486 A FSM p j IGBT4 = 4. generation fast trench IGBT T -40 ... 175 C j (Infineon) Module CAL4 = Soft switching 4. generation CAL-diode I T =80 C 500 A terminal t(RMS) Isolated copper baseplate using DBC T -40 ... 125 C stg technology (Direct Bonded Copper) V AC sinus 50 Hz, t = 1 min 4000 V isol Increased power cycling capability With integrated gate resistor Characteristics For higher switching frequenzies up to 20kHz Symbol Conditions min. typ. max. Unit UL recognized, file no. E63532 IGBT Typical Applications* I =100A V C T =25C 1.85 2.10 V j CE(sat) AC inverter drives V =15V GE T =150 C 2.20 2.40 V j UPS chiplevel Electronic welders at fsw up to 20 kHz V T =25C 0.8 0.9 V CE0 j chiplevel T =150 C 0.7 0.8 V j Remarks r T =25C 10.50 12.00 m CE V =15V j GE Case temperature limited chiplevel to T = 125C max. T =150 C 15.00 16.00 m c j Recommended T = -40 ... +150C op V V =V , I = 3.4 mA 5 5.8 6.5 V GE(th) GE CE C Product reliability results valid I T =25C 1mA CES V =0V j GE for T = 150C j V = 1200 V CE T =150 C mA j C f=1MHz 5.54 nF ies V =25V CE C f=1MHz 0.41 nF oes V =0V GE C f=1MHz 0.32 nF res Q V = - 8 V...+ 15 V 560 nC G GE R T =25C 2.0 Gint j V = 600 V t CC T =150 C 167 ns d(on) j I =100A C t T =150 C 37 ns r j V =15V GE E T =150 C 16.1 mJ on j R =1 G on t T =150 C 380 ns d(off) R =1 j G off di/dt = 3300 A/s t on T =150 C 78 ns f j di/dt =1300A/s off E T =150 C 8.6 mJ off j R per IGBT 0.29 K/W th(j-c) GB by SEMIKRON Rev. 1 03.09.2013 1SKM100GB12T4G Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 100 A V = V F T =25C 2.22 2.54 V F EC j V =0V GE T =150 C 2.18 2.50 V j chiplevel V T =25C 1.3 1.5 V j F0 chiplevel T =150 C 0.9 1.1 V j r T =25C 9.2 10.4 m j F chiplevel T =150 C 12.8 14.0 m j SEMITRANS 3 I = 100 A I F T =150 C 47 A j RRM di/dt =1600A/s off Q T =150 C 17 C j rr V =15V GE E T =150 C 6mJ rr j Fast IGBT4 Modules V = 600 V CC R per diode 0.49 K/W th(j-c) Module SKM100GB12T4G L 15 20 nH CE R T =25C 0.25 m CC +EE C terminal-chip T =125C 0.5 m C Features R per module 0.02 0.038 K/W th(c-s) IGBT4 = 4. generation fast trench IGBT M to heat sink M6 3 5 Nm s (Infineon) CAL4 = Soft switching 4. generation M to terminals M6 2.5 5 Nm t CAL-diode Nm Isolated copper baseplate using DBC w 325 g technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders at fsw up to 20 kHz Remarks Case temperature limited to T = 125C max. c Recommended T = -40 ... +150C op Product reliability results valid for T = 150C j GB 2 Rev. 1 03.09.2013 by SEMIKRON