PreliminaryDatasheet GCMS020A120S1E1 COPACK (SiC MOSFETs and SBDs) V =1200V CES 0 SOT-227 Power Module I = 80A T = 100 C D C 0 R = 20mohm T = 25 C DS ON J Features 4 HighspeedswitchingSiCMOSFETs Freewheelingdiodewithzeroreverserecovery 3 1 SiCSBDs 1 LowR DS ON 2 Simpletodrive 2 Kelvinreferenceforstablegatedriving Highjunctiontemperatureoperation Positivetemperaturecoefficientforeasyto parallelmounting Applications PhotoVoltaicInverter Aerospaceactuators ServerPowersupplies HighvoltageAC/DCConverter MotorDrivers Benefits Outstandingpowerconversionefficiencyat highswitchingfrequencyoperation LowswitchinglossesandLowEMInoises Veryruggedandeasymount Directmountingtoheatsink(isolatedpackage) Lowjunctiontocasethermalresistance EasyparallelingduetopositiveTCofVF RoHSCompliant Page1of9 Rev.0.5 05/27/2020PreliminaryDatasheet GCMS020A120S1E1 o Absolute Maximum Ratings (T=25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units SiCMOSFETs 0 0 MaximumDrainSourceVoltage V T =25 C~150 C 1200 V DSS j 0 T =25 C,V =20V 120 A j GS ContinuousDrainCurrent I D(DC) 0 T =150 C,V =20V 80 A j GS Pulsewidtht limitedbyT , P jmax PulseDrainCurrent I 160 A D(Pulse) 0 T =25 C C V AC(freq.>1kHz)10/+25 V GSMAX GateSourceVoltage V Static5/+20 V GSOP SiCSBDs MaximumReverseVoltage V 1200 V RRM 0 0 T =25 C,T =175 C 111 A C j 0 0 ContinuousForwardCurrent I T =121 C,T =175 C 60 A F C j 0 0 T =150 C,T =175 C 37 A C j SurgeNonrepetitiveForward 0 0 I T =25 C,T =25 C,T =8.3ms 270 A FSM C j p CurrentSineHalfwave COPACKModulesThermalProperties 0 T =25 C 640 W C MaximumPowerDissipation P D 0 T =100 C 250 W C 0 MOSFET40~150 C OperatingJunctionTemperature T j 0 SBD40~175 C 0 StorageTemperature T 40~150 C STG o =25 C unless otherwise specified) Electrical Characteristics (T j Parameters Symbol Conditions Min Typ Max Units SiCMOSFETs DrainSourceBreakdownVoltage V V =0V,I =100A 1200 V (BR)DSS GS D 0 V V =10V,I =20mA,T =25 C 2.0 2.6 4 V GS(TH) DS D j GateThresholdVoltage 0 V =10V,I =20mA,T =150 C 2.1 V DS D j 0 ZeroGateVoltageDrainCurrent I V =1200V,V =0V,T =25 C 2 200 DSS DS GS j GateSourceLeakageCurrent I V =20V,V =0V 500 n GSS GS DS InternalGateResistance R f=1MHz,V =25mV,perdie 0.9 G AC 0 R V =20V,I =80A,T =25 C 20 26 m DS(ON) GS D j DrainSourceOnstateResistance 0 V =20V,I =80A,T =150 C 42 50 m GS D j 0 V =20V,I =80A,T =25 C 15 DS D j Transconductance g S fs 0 V =20V,I =80A,T =150 C 13 DS D j Page2of9 Rev.0.5 05/27/2020