PreliminaryDatasheet GCMS040A120S1E1 V = 1200V 1200V/40 m SiC MOSFET CES 0 I = 40A T = 80 C D C in SOT-227 Package 0 R = 40 mohm T = 25 C DS ON J Features HighspeedswitchingSiCMOSFETs Freewheelingdiodewithzeroreverserecovery SiCSBDs LowR DS ON Simpletodrive Kelvinreferenceforstablegatedriving Highjunctiontemperatureoperation Positivetemperaturecoefficientforeasyto parallelmounting Applications PhotoVoltaicInverter Aerospaceactuators ServerPowersupplies HighvoltageAC/DCConverter Benefits Outstandingpowerconversionefficiencyat highswitchingfrequencyoperation LowswitchinglossesandLowEMInoises Veryruggedandeasymount Directmountingtoheatsink(isolatedpackage) Lowjunctiontocasethermalresistance EasyparallelingduetopositiveTCofVF RoHSCompliant Page1of9 Rev.0.3 05/27/2020PreliminaryDatasheet GCMS040A120S1E1 o Absolute Maximum Ratings (T=25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units SiCMOSFETs 0 0 MaximumDrainSourceVoltage V T =25 C~150 C 1200 V DSS j 0 ContinuousDrainCurrent I T =25 C,V =20V 60 A D(DC) j GS 0 T =150 C,V =20V 40 A j GS I PulseDrainCurrent Pulsewidtht limitedby D(Pulse) P 160 A 0 T ,T =25 C jmax C GateSourceVoltage V Absolutemaxvalue10/+25 V GS SiCSBDs MaximumReverseVoltage V 1200 V RRM 0 AverageForwardCurrent I T =25 C 30 A DAV j 0 T =150 C 15 A j I NonrepetitiveForwardSurgeCurrent Pulsewidtht limitedby FSM P 60 A T jmax SOT227ModulesThermalProperties 0 MaximumPowerDissipation P T =25 C TBD W D C 0 T =100 C TBD W C 0 OperatingJunctionTemperature T 40~150 C j 0 StorageTemperature T 40~150 C STG o Electrical Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units SiCMOSFETs DrainSourceBreakdownVoltage V V =0V,I =100A 1200 V (BR)DSS GS D 0 GateThresholdVoltage V V =10V,I =10mA,T =25 C 2.4 2.8 V GS(TH) DS D j -- 0 V =10V,I =10mA,T =150 C 1.8 2.0 V DS D j -- 0 ZeroGateVoltageDrainCurrent I V =1200V,V =0V,T =25 C DSS DS GS j 1 100 0 V =1200V,V =0V,T =150 C DS GS j TBD TBD GateSourceLeakageCurrent I V =20V,V =0V n GSS GS DS 250 InternalGateResistance R f=1MHz,V =25mV,perdie 1.8 G AC 0 DrainSourceOnstateResistance R V =20V,I =40A,T =25 C 40 52 m DS(ON) GS D j 0 V =20V,I =40A,T =150 C 84 100 m GS D j 0 Transconductance g V =20V,I =40A,T =25 C S fs DS D j 15 0 V =20V,I =40A,T =150 C 13 DS D j InputCapacitance C V =0V,V =1000V,freq= nF ISS GS DS 1.9 1MHz,V =25mV AC OutputCapacitance C pF 150 OSS Page2of9 Rev.0.3 05/27/2020