Preliminary Data Sheet GCMS080A120S1-E1 1200V/80 m SiC MOSFET in V = 1200V RRM 0 SOT-227 Package I = 20A T = 80 C D C 0 R = 80 mohm T = 25 C DS ON J Features High speed switching SiC MOSFET Freewheeling diode with zero reverse recovery SiC SBDs Low R DS ON Simple to drive Low stray inductance High junction temperature operation Easy to parallel and mounting Applications Photo Voltaic Inverter Motor Driver Multi-level Converter High voltage AC/DC Converter Benefits Outstanding power conversion efficiency at high switching frequency operation Low switching losses and Low EMI noises Very rugged and easy mount Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VF Reduced cooling requirement RoHS Compliant Page 1 of 9 Rev. 0.4 07/24/2020 Preliminary Data Sheet GCMS080A120S1-E1 o Absolute Maximum Ratings (T=25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units SiC MOSFET 0 0 Maximum Drain-Source Voltage V T = 25 C~150 C 1200 V DSS j 0 Continuous Drain Current I T = 25 C, V =20V 40 A D j GS 0 T = 150 C, V =20V 20 A j GS Pulsed Drain Current I Limited by Tj max 60 A DS Gate-Source Voltage V -10/+25 V GS 0 Maximum Power Dissipation P T = 25 C TBD W D C 0 T = 100 C TBD W C 0 Operating Junction Temperature T -40 ~ 150 C j 0 Storage Temperature T -40 ~ 125 C STG SiC SBDs Maximum Reverse Voltage V 1200 V RRM 0 Average Forward Current I T = 25 C 20 A DAV j 0 T = 150 C 7 A j I Non-repetitive Forward Surge Current T =25 C, t =8.3 ms 120 A FSM C p I Non-repetitive Forward Surge Current F,MAX T =25 C, t =10 s 700 A C p o Electrical Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage V V =0V, I =100A 1200 -- -- V (BR)DSS GS D 0 Gate Threshold Voltage V V = V , I =2.5mA, T = 25 C 1.7 2.2 -- V GS(TH) GS DS D j 0 V = V , I =2.5mA, T = 150 C -- 1.6 -- V GS DS D j 0 Zero Gate Voltage Drain Current I V =1200V, V =0V, T = 25 C -- 1 100 DSS DS GS j 0 V =1200V, V =0V, T = 150 C -- TBD -- DS GS j Gate Source Leakage Current I V =20V, V =0V -- -- 250 GSS GS DS n Internal Gate Resistance R f = 1MHz, V = 25mV, 1.5 G AC ESR of C iss 0 Drain-Source On-state Resistance R V = 20V, I =20A, T = 25 C -- 80 -- m DS(ON) GS D j 0 V = 20V, I =20A, T = 150 C -- 150 -- m GS D j Input Capacitance C V = 0V, V = 800V, freq = -- 950 -- pF ISS GS DS 1MHz, V = 25mV, measured AC Output Capacitance C -- 80 -- pF OSS at one MOSFET. Reverse transfer Capacitance C -- 6.5 -- pF rSS Turn-on Delay Time t V = 800V, V = -5/20V -- 15 -- ns d(on)i DS GS I = 20A, R = 2.5, D G(ext) Rise Time t -- 35 -- ns ri L = 856H Turn-off Delay Time t -- 32 -- ns d(off)i Page 2 of 9 Rev. 0.4 07/24/2020