X-On Electronics has gained recognition as a prominent supplier of GHXS015A120S-D3 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. GHXS015A120S-D3 Discrete Semiconductor Modules are a product manufactured by SemiQ. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

GHXS015A120S-D3 SemiQ

GHXS015A120S-D3 electronic component of SemiQ
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Part No.GHXS015A120S-D3
Manufacturer: SemiQ
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
Datasheet: GHXS015A120S-D3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 22.572 ea
Line Total: USD 22.57 
Availability - 14
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 22.572
20 : USD 18.524

   
Manufacturer
Product Category
Product
Type
Vf - Forward Voltage
Vr - Reverse Voltage
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Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the GHXS015A120S-D3 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GHXS015A120S-D3 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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DataSheet GHXS015A120SD3 SiC SBD Parallel V = 1200V RRM 0 Power Module I = 15A T = 125 C DAV C Features SiCSchottkyDiode Zeroreverserecovery Zeroforwardrecovery TemperatureIndependentswitchingbehavior PositivetemperaturecoefficientonV F Lowstrayinductance Highjunctiontemperatureoperation Applications SuppliesforDCpowerequipment Rectifierforinductionheating Weldingequipment Hightemperatureandrectifiers Benefits Parallel Outstandingperformanceathighfrequency operation LowlossesandLowEMInoises Veryruggedandeasymount Directmountingtoheatsink(isolatedpackage) Lowjunctiontocasethermalresistance EasyparallelingduetopositiveTCofVF RoHSCompliant o Absolute Maximum Ratings (T=25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units MaximumReverseVoltage V 1200 V RRM 0 AverageForwardCurrent(perSBD) I T =25 C 30 A DAV C 0 T =150 C 15 A C 0 I NonrepetitiveForwardSurgeCurrent t=8.3ms,T =150 C FSM C 75 A 0 300 A T=10 s,T =25 C C 0 OperatingJunctionTemperature T 55~175 C j 0 StorageTemperature T 55~150 C STG Page1of5 Rev.1.2 01/03/2020DataSheet GHXS015A120SD3 o Electrical Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units Maximumpeakrepetitivereverse V 1200 V RRM voltage 0 MaximumReverseLeakageCurrent I V =1200V,T =25 C 4.1 A RM R j 100 0 V =1200V,T =150 C 606 A R j -- 0 DiodeForwardVoltage V I =15A,T =25 C 1.5 V F F j 1.7 0 I =15A,T =150 C 2.3 V F j -- VR=1200 V, IF<IF,max TotalCapacitiveCharge Q 52 nC C -- 0 SwitchingTime t dI /dt=200A/s,T =175 C ns C F j 10 TotalCapacitance C V =1V,f=1MHz 895 pF R V =600V,f=1MHz 52 pF R V =1200V,f=1MHz 43 pF R o Thermal and Package Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units 0 JunctiontoCaseThermalResistance R PerDiode 0.65 C/W THJC 0 PerModule TBD C/W 0 JunctiontoAmbientThermal R PerDiode TBD C/W THJA 0 Resistance PerModule TBD C/W MountingTorque M 1.5 Nm d TerminalConnectionTorque M 1.3 Nm dt 1.5 PackageWeight W 32 g t IsolationVoltage V I <1mA,50/60Hz,t=1min 2500 V ISOL ISOL Product Number and Descriptions PartNumber Rating Pin1 Pin2 Pin3 Pin4 GHXS015A120SD3 1200V,15A Cathode1 Anode1 Anode2 Cathode2 Page2of5 Rev.1.2 01/03/2020

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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