X-On Electronics has gained recognition as a prominent supplier of GHXS030A120S-D1E Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. GHXS030A120S-D1E Discrete Semiconductor Modules are a product manufactured by SemiQ. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

GHXS030A120S-D1E SemiQ

Name: GHXS030A120S-D1E
Brand: SemiQ
SKU: GHXS030A120SD1E_SemiQ
Availability: OutOfStock
Rating: 5 (11 reviews)

GHXS030A120S-D1E electronic component of SemiQ

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See Product Specifications

Part No.	GHXS030A120S-D1E
Manufacturer:	SemiQ
Category:	Discrete Semiconductor Modules
Description:	Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
Datasheet:	GHXS030A120S-D1E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 50.116 ea
Line Total: USD 50.12

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

GHXS030A120S-D1E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Tue. 31 Dec MOQ : 1 Multiples : 1	1 : USD 50.116 10 : USD 42.625 50 : USD 42.614 100 : USD 40.172 500 : USD 40.172 1000 : USD 40.172

Specifications

Manufacturer SemiQ SemiQ
Product Category Discrete Semiconductor Modules Discrete Semiconductor Modules
Packaging Tube Tube
Category Discrete Semiconductor Modules Discrete Semiconductor Modules
Factory Pack Quantity : 10 10

We are delighted to provide the GHXS030A120S-D1E from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GHXS030A120S-D1E and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

DataSheet GHXS030A120SD1E SiC SBD Rectifier Bridge V = 1200V RRM 0 Power Module I = 30A T = 125 C DAV C Features SiCSchottkyDiode Zeroreverserecovery Zeroforwardrecovery TemperatureIndependentswitchingbehavior PositivetemperaturecoefficientonV F Lowstrayinductance Highjunctiontemperatureoperation Applications SuppliesforDCpowerequipment Rectifierforinductionheating Weldingequipment Hightemperatureandrectifiers Benefits Outstandingperformanceathighfrequency operation LowlossesandLowEMInoises Veryruggedandeasymount Directmountingtoheatsink(isolatedpackage) Lowjunctiontocasethermalresistance EasyparallelingduetopositiveTCofVF RoHSCompliant o Absolute Maximum Ratings (T =25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units MaximumReverseVoltage V 600 V RRM 0 AverageForwardCurrent I T =25 C 60 A DAV C 0 T =125 C 30 A C 0 NonrepetitiveForwardSurge I tp=8.3ms,T =25 C 240 A FSM C 0 Current 600 A tp=10 s,T =25 C C 0 OperatingJunctionTemperature T 55~175 C j 0 StorageTemperature T 55~150 C STG Page1of5 Rev.1.2 01/03/2020DataSheet GHXS030A120SD1E o Electrical Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units Maximumpeakrepetitivereverse V 1200 V RRM voltage 0 MaximumReverseLeakageCurrent I V =1200V,T =25 C 9 200 A RM R j 0 V =1200V,T =150 C 1212 A R j 0 DiodeForwardVoltage V I =30A,T =25 C 1.5 1.7 V F F j 0 I =30A,T =150 C 2.3 V F j TotalCapacitiveCharge Q VR=1200V,IF<IF,max 105 nC C 0 SwitchingTime t 10 ns dI /dt=200A/s,T =175 C C F j TotalCapacitance C V =1V,f=1MHz 1800 pF R V =600V,f=1MHz 105 pF R V =1200V,f=1MHz 86 pF R o Thermal and Package Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units 0 JunctiontoCaseThermalResistance R PerDiode 0.65 C/W THJC 0 JunctiontoAmbientThermal R PerDiode TBD C/W THJA Resistance MountingTorque M 1.5 Nm d TerminalConnectionTorque M 1.3 Nm dt 1.5 PackageWeight W 32 g t IsolationVoltage V I <1mA,50/60Hz,t=1min 2500 V ISOL ISOL Part Number and Pin assignment PartNumber Rating Pin1 Pin2 Pin3 Pin4 GHXS030A120SD1E 1200V,30A ACInput1 ACInput2 DC DC+ Page2of5 Rev.1.2 01/03/2020

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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