GHXS060B120S-D3 VDC 1200 V I 60 A F T ,max 175 C j 1200V SiC Power Module Dual Diode Pack Features Package SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on V F Low stray inductance High junction temperature operation Parallel Benefits Outstanding performance at high frequency operation Low loss and low EMI noise Part Package Marking Very rugged and easy mount Direct mounting to heatsink (isolated package) GHXS060B120S-D3 SOT-227 GHXS060B120S-D3 Low junction to case thermal resistance Easy paralleling due to positive T of V C F RoHS compliant Applications DC power supply Induction heater Welding equipment Charging station Maximum Ratings, at T =25 C, unless otherwise specified (per leg) j Characteristics Symbol Conditions Value Unit T =25 C, T =175 C 114 C j I T =125 C, T =175 C Continuous forward current 60 A F C j T =150 C, T =175 C 38 C j T =25 C, Tj=25 C, t =8.3 ms 500 C p Surge non-repetitive forward current I A FSM sine halfwave T =110 C, Tj=110 C, t =8.3 ms 430 C p I T =25 C, t =10 s Non-repetitive peak forward current 1200 A F,max C p T =25 C, t =8.3 ms 1038 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 767 C p Repetitive peak reverse voltage V T 25 C 1200 V j RRM Diode dv/dt ruggedness Turn-on slew rate, repetitive 200 V/ns dv/dt P T =25 C Power dissipation 375 W tot C Operating junction temperature T -55175 C j Storage temperature T -55150 C storage Rev.1.1,1/21/2020 www.SemiQ.com p.11200V SiC Power Module GHXS060B120S-D3 Electrical Characteristics, at T =25 C, unless otherwise specified (per leg) j Values Characteristics Symbol Conditions Unit min. typ. max. V I =120A, T =25 C DC blocking voltage 1200 - - V DC R j I =60A, T =25 C - 1.50 1.65 F j Diode forward voltage V I =60A, T =125 C - 1.83 - V F F j I =60A, T =175 C - 2.12 2.70 F j V =1200V, T =25 C - 4 120 R j I V =1200V, T =125 C Reverse current -42 - A R R j V =1200V, T =175 C - 185 1800 R j Total capacitive charge Q V =800V, T =25 C - 343 - nC R j C V =1V, f=1 MHz - 3828 - R V =400V, f=1 MHz Total capacitance C - 323 - pF R V =800V, f=1 MHz - 235 - R Thermal and Package Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R Per leg 0.27 - 0.40 C/W thJC M Mounting torque M4-0.7 screws 1.1 - 1.5 N-m d Terminal connection torque M M4-0.7 screws - 1.1 1.3 N-m dt Package weight W - 32 - g t I < 1mA, ISOL Isolation voltage V 2500 - -V ISOL 50/60 Hz, 1 min Typical Performance Per Leg 100 1.E03 55C 55C 90 25C 25C 80 1.E04 75C 75C 125C 70 125C 175C 175C 60 1.E05 50 40 1.E06 30 20 1.E07 10 0 1.E08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T ) Fig. 2 Reverse Characteristics (parameterized on T ) j j Rev.1.1,1/21/2020 www.SemiQ.com p.2 I (A) F I (A) R