G H X S 1 0 0 B 0 6 5 S - D 3 VDC 650 V I 100 A F T ,max 175 C j 650V SiC Power Module Dual Diode Pack Features Package SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on V F Low stray inductance High junction temperature operation All parts tested to greater than 715V Parallel Benefits Outstanding performance at high frequency operation Low loss and low EMI noise Very rugged and easy mounting Internally isolated package (AlN) Part Package Marking Low junction to case thermal resistance Easy paralleling due to positive T of V C F GHXS100B065S-D3 SOT-227 GHXS100B065S-D3 RoHS compliant Applications Switched-mode power supply Induction heater Welding equipment Charging station Maximum Ratings, at T =25 C, unless otherwise specified (per leg) j Characteristics Symbol Conditions Values Unit T =25 C, T =175 C 193 C j Continuous forward current I T =122 C, T =175 C 100 A F* C j T =150 C, T =175 C 59 C j T =25 C, t =8.3 ms 580 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 540 C p Non-repetitive peak forward current I T =25 C, t =10 s 2000** A F,max C p T =25 C, t =8.3 ms 1396 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 1210 C p V T =25 C Repetitive peak reverse voltage 650 V RRM j dv/dt 200 V/ns Diode dv/dt ruggedness Turn-on slew rate, repetitive Power dissipation P T =25 C 480 W tot* C T Operating junction temperature -55175 C j T Storage temperature -55150 C storage Notes: *Typical Rth used JC **Limited by testing equipment Rev. 1, 9/16/2020 www.SemiQ.com p.1650V SiC Power Module G H X S 1 0 0 B 0 6 5 S - D 3 Electrical Characteristics, at T =25 C, unless otherwise specified (per leg) j Values Characteristics Symbol Conditions Unit min. typ. max. V I =250A, T =25 C DC blocking voltage 650 - - V DC R j Breakdown voltage V I =3.3mA, T =25 C 715 - - V BR R j I =100A, T =25 C - 1.45 1.65 F j Diode forward voltage V I =100A, T =125 C - 1.61 - V F F j I =100A, T =175 C - 1.77 2.10 F j V =650V, T =25 C - 11 250 R j V =715V, T =25 C - 45 - R j Reverse current I mA R V =650V, T =125 C - 82 - R j V =650V, T =175 C - 294 1000 R j Q V =400V, T =25 C Total capacitive charge - 241 - nC C R j V =1V, f=1 MHz - 3891 - R Total capacitance C V =200V, f=1 MHz - 456 - pF R V =400V, f=1 MHz - 377 - R Thermal and Package Characteristics, at Tj=25 C, unless otherwise specified Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R Per leg - 0.31 0.43 C/W thJC Mounting torque M M4-0.7 screws 1.1 - 1.5 N-m d Terminal connection torque M M4-0.7 screws - 1.1 1.3 N-m dt W Package weight - 32 - g t I < 1mA, ISOL Isolation voltage V 2500 - - V ISOL 50/60 Hz, 1 min Typical Performance Per Leg 200 1.E-03 -55C -55C 180 25C 25C 160 1.E-04 75C 75C 125C 125C 140 175C 175C 120 1.E-05 100 80 1.E-06 60 40 1.E-07 20 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T ) Fig. 2 Reverse Characteristics (parameterized on T ) j j Rev. 1, 9/16/2020 www.SemiQ.com p.2 I (A) F I (A) R