X-On Electronics has gained recognition as a prominent supplier of GHXS100B120S-D3 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. GHXS100B120S-D3 Discrete Semiconductor Modules are a product manufactured by SemiQ. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

GHXS100B120S-D3 SemiQ

GHXS100B120S-D3 electronic component of SemiQ
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Part No.GHXS100B120S-D3
Manufacturer: SemiQ
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SiC SBD 1200V 100A SiC Power Modules
Datasheet: GHXS100B120S-D3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 72.853 ea
Line Total: USD 72.85 
Availability - 27
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 72.853
10 : USD 64.031
20 : USD 64.02
100 : USD 63.206
200 : USD 63.206
500 : USD 63.206
1000 : USD 63.206
2000 : USD 63.206

   
Manufacturer
Product Category
Product
Type
Vf - Forward Voltage
Vr - Reverse Voltage
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Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the GHXS100B120S-D3 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GHXS100B120S-D3 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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G H X S 1 0 0 B 1 2 0 S - D 3 VDC 1200 V I 100 A F T ,max 175 C j 1200V SiC Power Module Dual Diode Pack Features Package SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on V F Low stray inductance High junction temperature operation All parts tested to greater than 1,400V Parallel Benefits Outstanding performance at high frequency operation Low loss and low EMI noise Very rugged and easy mount Internally isolated package (AlN) Part Package Marking Low junction to case thermal resistance Easy paralleling due to positive T of V C F GHXS100B120S-D3 SOT-227 GHXS100B120S-D3 RoHS compliant Applications Switched-mode power supply Induction heater Welding equipment Charging station Maximum Ratings, at T =25 C, unless otherwise specified (per leg) j Characteristics Symbol Conditions Values Unit T =25 C, T =175 C 198 C j Continuous forward current I T =128 C, T =175 C 100 A F* C j T =150 C, T =175 C 67 C j T =25 C, t =8.3 ms 760 C p Surge non-repetitive forward current I A FSM sine halfwave T =110 C, t =8.3 ms 670 C p I T =25 C, t =10 s Non-repetitive peak forward current 2000** A F,max C p T =25 C, t =8.3 ms 2397 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 1863 C p Repetitive peak reverse voltage V T =25 C 1200 V RRM j Diode dv/dt ruggedness dv/dt Turn-on slew rate, repetitive 200 V/ns Power dissipation P T =25 C 674 W tot* C Operating junction temperature T -55175 C j Storage temperature T -55150 C storage Notes: *Typical Rth used JC ** Limited by testing equipment Rev. 2, 8/24/2020 www.SemiQ.com p.11200V SiC Power Module G H X S 1 0 0 B 1 2 0 S - D 3 Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. V I =200A, T =25 C DC blocking voltage 1200 - - V DC R j Breakdown voltage V I =4mA, T =25 C 1400 - - V BR R j I =100A, T =25 C - 1.5 1.7 F j Diode forward voltage V I =100A, T =125 C - 1.8 - V F F j I =100A, T =175 C - 2.1 2.7 F j V =1,200V, T =25 C - 11 200 R j V =1,400V, T =25 C - 69 - R j Reverse current I mA R V =1,200V, T =125 C - 97 - R j V =1,200V, T =175 C - 386 1500 R j Q V =800V, T =25 C Total capacitive charge - 538 - nC C R j V =1V, f=1 MHz - 6080 - R Total capacitance C V =400V, f=1 MHz - 506 - pF R V =800V, f=1 MHz - 362 - R Thermal and Package Characteristics, at Tj=25 C, unless otherwise specified Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R Per leg - 0.22 0.28 C/W thJC Mounting torque M M4-0.7 screws 1.1 - 1.5 N-m d Terminal connection torque M M4-0.7 screws - 1.1 1.3 N-m dt W Package weight - 32 - g t I < 1mA, ISOL Isolation voltage V 2500 - - V ISOL 50/60 Hz, 1 min Typical Performance 200 1.E-03 -55C -55C 180 25C 25C 160 1.E-04 75C 75C 125C 125C 140 175C 175C 120 1.E-05 100 80 1.E-06 60 40 1.E-07 20 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T ) Fig. 2 Reverse Characteristics (parameterized on T ) j j Rev. 2, 8/24/2020 www.SemiQ.com p.2 I (A) F I (A) R

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