G P 3 D 01 0 A 17 0B VDC 1700 V Q 103 nC C I 10 A F 1700V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 350mJ* All parts tested to greater than 1,870V High forward surge current T M A mp + Benefits Near zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking T M A mp + Applications GP3D010A170B TO-247-2L 3D010A170 Switch mode power supplies, UPS DC/DC Converters Solar Inverters EV charging stations Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 39 C j Continuous forward current I T =125 C, T=175 C 21 A F** C j T =150 C, T=175 C 14 C j T =25 C, t =8.3 ms 130 C p Surge non-repetitive forward current I A FSM sine halfwave T =110 C, t =8.3 ms 120 C p Non-repetitive peak forward current I T =25 C, t =10 s 900 A C p F,max T =25 C, t =8.3 ms 70 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 60 C p Repetitive peak reverse voltage V T=25 C 1700 V RRM j Turn-on slew rate, Diode dv/dt ruggedness 200 V/ns dv/dt repetitive Power dissipation T =25 C 249 W P tot** C Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 350 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 26.46 A, V = 50 V. ** Typical Rth used JC Rev. 1, 7/7/2020 www.SemiQ.com p.1TM 1700V SiC Schottky Diode A m p + G P 3 D 01 0 A 17 0B Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 1700 - - V j DC I =0.33mA, T=25 C Breakdown voltage V 1870 - - V R j BR I =10A, T=25 C - 1.48 1.65 F j Diode forward voltage V I =10A, T=125 C - 1.93 - V F F j I =10A, T=175 C - 2.29 2.55 F j V =1,700V, T=25 C - 2 40 R j V =1,870V, T=25 C - 5 - R j Reverse current I R mA V =1,700V, T=125 C - 12 - R j V =1,700V, T=175 C - 47 400 R j Total capacitive charge Q V =1700V, T=25 C - 103 - nC C R j V =1V, f=1 MHz - 699 - R Total capacitance C V =800V, f=1 MHz - 45 - pF R V =1700V, f=1 MHz - 44 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 0.60 0.75 C/W thJC Typical Performance 20 1.E-04 -55C -55C 18 25C 25C 16 75C 75C 1.E-05 125C 14 125C 175C 175C 12 10 1.E-06 8 6 1.E-07 4 2 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 200 700 1,200 1,700 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1, 7/7/2020 www.SemiQ.com p.2 I (A) F I (A) R