G P 3 D 04 0 A 06 5U VDC 650 V Q 104 nC*** C I 40 A*** F 650V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 135mJ per leg* T M A mp + Benefits Zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D040A065U TO-247-3L 3D040A065 T M A mp + Applications Switch mode power supplies, UPS Power factor correction EV charging stations Output rectification Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Per Leg Symbol Conditions Values Unit T =25 C, T=175 C 51 C j Continuous forward current I ** T =125 C, T=175 C 27 A F C j T =150 C, T=175 C 17 C j T =25 C, t =8.3 ms 135 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 125 C p Non-repetitive peak forward current T =25 C, t =10 s 850 A I F,max C p T =25 C, t =8.3 ms 76 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 65 C p T=25 C Repetitive peak reverse voltage V 650 V RRM j Turn-on slew rate, Diode dv/dt ruggedness dv/dt 200 V/ns repetitive T =25 C Power dissipation P ** 176 W C tot Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 135 mJ is based on starting Tj 25C, L = 1.0 mH, IAS = 16.43 A, V = 50 V. = ** Typical Rth used JC *** Per Device Rev. 1.1, 2/20/2020 www.SemiQ.com p.1TM 650V SiC Schottky Diode A m p + G P 3 D 04 0 A 06 5U Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Per Leg Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 650 - - V j DC I =20A, T=25 C - 1.52 1.70 F j Diode forward voltage V I =20A, T=125 C - 1.64 - V F F j I =20A, T=175 C - 1.78 2.20 F j V =650V, T=25 C - 3 50 R j Reverse current I V =650V, T=125 C - 19 - mA R R j V =650V, T=175 C - 65 500 R j Total capacitive charge Q V =400V, T=25 C - 52 - nC C R j V =1V, f=1 MHz - 835 - R Total capacitance C V =200V, f=1 MHz - 99 - pF R V =400V, f=1 MHz - 83 - R Thermal Characteristics Values Characteristics Per Leg Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 0.85 1.10 C/W thJC Typical Performance Per Leg 40 1.E-04 -55C -55C 35 25C 25C 75C 75C 30 1.E-05 125C 125C 175C 175C 25 20 1.E-06 15 10 1.E-07 5 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1.1, 2/20/2020 www.SemiQ.com p.2 I (A) F I (A) R