G P 3 D 05 0 A 12 0B VDC 1200 V Q 269 nC C I 50 A F 1200V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 666mJ* All parts tested to greater than 1,400V T M A mp + Benefits Near zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D050A120B 3D050A120 TO-247-2L T M A mp + Applications Solar Inverters Switch mode power supplies, UPS Power factor correction EV charging stations Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 136 C j Continuous forward current I T =125 C, T=175 C 74 A F** C j T =150 C, T=175 C 48 C j T =25 C, t =8.3 ms 390 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 340 C p Non-repetitive peak forward current I T =25 C, t =10 s 2000*** A F,max C p T =25 C, t =8.3 ms 631 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 480 C p Repetitive peak reverse voltage V T=25 C 1200 V RRM j Turn-on slew rate, 200 V/ns Diode dv/dt ruggedness dv/dt repetitive T =25 C Power dissipation P 600 W C tot** Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 666 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 36.50 A, V = 50 V. ** Typical Rth used JC *** Limited by testing equipment Rev. 1, 4/24/2020 www.SemiQ.com p.1TM 1200V SiC Schottky Diode A m p + G P 3 D 05 0 A 12 0B Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 1200 - - V j DC I =2.00mA, T=25 C Breakdown voltage V 1400 - - V R j BR I =50A, T=25 C - 1.50 1.70 F j Diode forward voltage V I =50A, T=125 C - 1.82 - V F F j I =50A, T=175 C - 2.10 2.70 F j V =1,200V, T=25 C - 6 100 R j V =1,400V, T=25 C - 35 - R j Reverse current I R mA V =1,200V, T=125 C - 49 - R j V =1,200V, T=175 C - 193 750 R j Total capacitive charge Q V =800V, T=25 C - 269 - nC C R j V =1V, f=1 MHz - 3040 - R Total capacitance C V =400V, f=1 MHz - 253 - pF R V =800V, f=1 MHz - 181 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 0.25 0.35 C/W thJC Typical Performance 100 1.E-03 -55C -55C 90 25C 25C 80 1.E-04 75C 75C 125C 70 125C 175C 175C 60 1.E-05 50 40 1.E-06 30 20 1.E-07 10 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1, 4/24/2020 www.SemiQ.com p.2 I (A) F I (A) R