PClamp1211P TM Power MicroClamp High-Surge TVS Diode PROTECTION PRODUCTS Description Features Transient Protec tion to PClamp T VS diodes are designed for use in harsh IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contac t) transient environments to protec t sensitive elec tronics IEC 61000-4-4 (EFT ) 4kV (5/50ns) from damage or latch-up due to EOS, lightning, CDE, and IEC 61000-4-5 (Lightning) 180A (8/20s) ESD. They feature large cross-sec tional area junc tions ISO -10605 (ESD) 30kV (Air), 30kV (Contac t) for conduc ting high transient cur rents. These devices Protec ts power line offer desirable charac ter istics for board level protec tion Wor k ing Voltage: 13.5V including fast response time, low operating and Low leak age cur rent clamping voltage, and no device degradation. S olid-state silicon-avalanche technology They feature ex tremely good protec tion charac ter istics Mechanical Characteristics highlighted by high surge cur rent capabilit y (180A, tp = 8/20s), low peak ESD clamping voltage, and high ESD SLP2018P6 pack age withstand voltage (+/- 30kV per IEC 61000-4-2). Each Pb -Free, Halogen Free, R oHS/WEEE compliant device will protec t power line operating up to 13.5V. Nominal Dimensions: 2.0 x 1.8 x 0.57 mm Lead Finish: N iPdAu M ar k ing: M ar k ing code PClamp1211P is in a 6-pin SLP2018P6 pack age Pack aging: Tape and R eel measur ing 2.0 x 1.8 mm with a nominal height of 0.57mm. The leads are finished with lead-free N iPdAu. H igh surge cur rent capabilit y and low clamping voltage Applications mak ing them ideal for protec ting VBus, batter y, and Cellular Handsets & Accessor ies other power lines in por table elec tronics, industr ial, and I ndustr ial Equipment automotive applications. Voltage Supply Lines Batter y protec tion USB VBus Schematic Pin Configuration 1 VBu s GND GND NC NC GND GND NC 5, 6, Tabs SLP2018P6 (Top View) PClamp1211P 1 of 8 www.semtech.com Final Datasheet Rev 3.0 Semtech Revision Date 5/11/2016Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 5000 W PK Peak Pulse Cur rent (tp = 8/20s) I 180 A PP Peak Pulse Cur rent (tp = 10/1000s) I 15 A PP (1) ESD per IEC 61000-4-2 (Contac t) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) PClamp1211P Parameter Symbol Conditions Min. Typ. Max. Units (5) R everse Stand- O ff Voltage V Pin 1 to Pin 5, 6 13.5 V R WM I = 1mA, t R everse Breakdown Voltage V 14.5 15 17.5 V (5) BR Pin 1 to Pin 5, 6 V = 13.5V R WM R everse Leak age Cur rent I 0.300 0.350 A R (5) Pin 1 to Pin 5, 6 I = 100A, tp = 8/20s, (2) PP Clamping Voltage V 18 25 V C (5) Pin 1 to Pin 5, 6 I = 180A, tp = 8/20s, (2) PP Clamping Voltage V 23.5 28 V C (5) Pin 1 to Pin 5, 6 tp = 0.2/100ns ( TLP) (3), (4) D ynamic R esistance R 0.01 Ohms (5) DYN Pin 1 to Pin 5, 6 V = 0V, f = 1MH z R Junc tion Capacitance C 1500 2500 pF J (5) Pin 1 to Pin 5, 6 Notes: (1): ESD Gun retur n path to Ground R eference Plane (GRP) (2):Tested using a constant cur rent source (3): Transmission Line Pulse Test ( TLP) S ettings: tp = 100ns, tr = 0.2ns, I and V averaging window : t = 70ns to t = 90ns. TLP TLP 1 2 (4): D ynamic resistance calculated from I = 4A to I = 16A TLP TLP (5) Pins 5 and 6 are elec tr ically connec ted to the center tabs PClamp1211P 2 of 8 www.semtech.com Final Datasheet Rev 3.0 Semtech Revision Date 5/11/2016