Clamp0561P - Clamp6061P High Power MicroClamp 1-Line ESD and Surge Protection PROTECTION PRODUCTS Description Features Transient Protection to Clamp TVS diodes are designed to protect sensitive IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contact) electronics from damage or latch-up due to EOS, IEC 61000-4-4 (EFT) 4kV (5/50ns) lightning, CDE, and ESD. They feature large cross- IEC 61000-4-5 (Lightning) 8-80A (8/20s) sectional area junctions for conducting high transient Protects one data or power line currents. These devices offer desirable characteristics Working voltage options: 5V, 10V, 12V, 15V, 24V, 30V, for board level protection including fast response time, 36V, 40V, 60V low operating and clamping voltage, and no device Low leakage current degradation. High peak pulse current capability Solid-state silicon-avalanche technology Clampxx61P series are designed for for use in harsh transient environments. They feature extremely good Mechanical Characteristics protection characteristics highlighted by high surge current capability, low peak ESD clamping voltage, SLP1608P2 package and high ESD withstand voltage. Device options are Pb-Free, Halogen Free, RoHS/WEEE compliant available for protecting data or power lines operating at Nominal Dimensions: 1.6 x 0.8 x 0.50 mm Lead Finish: NiPdAu 5V to 60V. Marking: Marking code Packaging: Tape and Reel Clampxx61P are in a 2-pin SLP1608P2 package measuring 1.6 x 0.8 mm with a nominal height of 0.50mm. The leads are finished with lead-free NiPdAu. Applications High surge current capability and low clamping voltage Cellular Handsets making them ideal for protecting VBus, battery, and Industrial Equipment other power lines in consumer and industrial electronics. Microcontroller RESET and IRQ Pins USB Voltage Bus Battery protection Tablet PC CCTV Cameras Instrumentation Package Dimension Schematic & Pin Configuration 0.80 2 1.60 1 0.50 SLP1608P2 (Bottom View) Clamp0561P - Clamp6061P 1 of 12 www.semtech.com Final Datasheet Rev 4.2 Semtech Revision date 1/24/2018Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 1200-1600 W PK Peak Pulse Current (tp = 8/20s) I 8-80 A PP (1) ESD per IEC 61000-4-2 (Contact) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Clamp0561P Parameter Symbol Conditions Min. Typ. Max. Units O O Reverse Stand-Off Voltage V -40 C to 125 C, Pin 2 to Pin 1 5 V RWM Reverse Breakdown Voltage V I = 1mA, Pin 2 to Pin 1 6 7 9 V BR t O Reverse Leakage Current I V = 5V T = 25 C 50 300 nA R RWM Peak Pulse Current I tp = 8/20s 80 A PP (2) Clamping Voltage V I = 40A, tp = 8/20s, Pin 2 to Pin 1 12 V C PP (2) Clamping Voltage V I = 80A, tp = 8/20s, Pin 2 to Pin 1 15 V C PP (3), (4) Dynamic Resistance R tp = 0.2/100ns (TLP), Pin 2 to Pin 1 0.05 Ohms DYN V = 0V, f = 1MHz R O Junction Capacitance C T = 25 C 800 pF J Pin 2 to Pin 1 Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2):Tested using a constant current source (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP Clamp0561P - Clamp6061P 2 of 12 www.semtech.com Final Datasheet Rev 4.2 Semtech Revision date 1/24/2018