Clamp0571P - Clamp3671P High-Power Clamp 1-Line Surge Protection PROTECTION PRODUCTS Description Features Transient protection for high-speed data lines to Clamp TVS diodes are designed to protect sensitive IEC 61000-4-2 (ESD) 30kV (air), 30kV (contact) electronics from damage or latch-up due to EOS, IEC 61000-4-4 (EFT) 40A (5/50ns) lightning, CDE, and ESD. They feature large cross- IEC 61000-4-5 (Lightning) 20 - 80A (8/20s) sectional area junctions for conducting high transient Protects one data or power line currents. These devices offer desirable characteristics Low leakage current High peak pulse current capability for board level protection including fast response time, Operating voltage options: 5V, 8V, 10V, 12V, 15V, low operating and clamping voltage, and no device 18V, 22V, 26V, 36V degradation. Solid-state silicon-avalanche technology The Clampxx71P series are in 2-pin SGP1610N2 Mechanical Characteristics package measuring 1.6 x 1.0 mm with a nominal height of 0.57mm. The leads are finished with leadfree SGP1610N2 package NiPdAu. They may be used to protect 5V, 8V, 10V, 12V, Pb-Free, Halogen Free, RoHS/WEEE Compliant 15V, 18V, 22V, 26V, and 36V systems. They feature Nominal Dimensions: 1.6 x 1.0 x 0.57 mm Lead Finish: NiPdAu high surge current capability and low clamping Marking: Marking code voltage making them ideal for use in harsh transient Packaging: Tape and Reel environments. Applications Cellular Handsets & Accessories USB Voltage Bus Battery Protection Digital Lines Proximity Sensors Package Dimension Schematic & Pin Configuration A 1.60 B 1 1.00 0.50 2 SGP1610N2 (Bottom View) Nominal Dimensions (mm) Clamp0571P - Clamp3671P 1 of 14 www.semtech.com Final Datasheet Rev 8.0 Semtech Revision date 1/11/2018Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 1200-1500 W PK 1 ESD per IEC 61000-4-2 (Air) 30 V kV 1 ESD ESD per IEC 61000-4-2 (Contact) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Clamp0571P Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin 1 to 2 5 V RWM Reverse Breakdown Voltage V I = 1mA, Pin 1 to 2 6 7 9 V BR BR O Reverse Leakage Current I V = 5V T = 25 C <10 100 nA R RWM Peak Pulse Current I tp = 8/20s, Pin 1 to 2 80 A pp I = 40A 10 PP Clamping Voltage V tp = 8/20s V C I = 80A 15 PP 2,3 Dynamic Resistance R tp = 0.2/100ns 0.05 DYN Junction Capacitance C V = 0V, f = 1MHz 675 pF J R Clamp0871P Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin 1 to 2 8 V RWM Reverse Breakdown Voltage V I = 1mA, Pin 1 to 2 9.5 11 13 V BR BR O Reverse Leakage Current I V = 8V T = 25 C <10 100 nA R RWM Peak Pulse Current I tp = 8/20s, Pin 1 to 2 65 A pp I = 10A 15 PP Clamping Voltage V tp = 8/20s V C I = 65A 23 PP 2,3 Dynamic Resistance R tp = 0.2/100ns 0.05 DYN Junction Capacitance C V = 0V, f = 1MHz 475 pF J R Clamp0571P - Clamp3671P 2 of 14 www.semtech.com Final Datasheet Rev 8.0 Semtech Revision Date 1/11/2018