RClamp0512TQ Low Capacitance RailClamp 2-Line Surge and ESD Protection PROTECTION PRODUCTS Description Features Transient Protec tion to R Clamp0512TQ is specifically designed to provide IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contac t) secondar y surge and ESD protec tion on high-speed IEC 61000-4-4 (EFT ) 4kV (5/50ns) por ts. R Clamp0512TQ integrates low capacitance, IEC 61000-4-5 (Lightning) 20A (8/20s) surge -rated steer ing diodes with a high power transient ISO -10605 (ESD) 30kV (Air), 30kV (Contac t) voltage suppressor ( T VS). The T VS utilizes snap -back Q ualified to AEC- Q100, Grade 1 2 or crow-bar technology to minimize device clamping Ver y Small PCB Area: 0.6mm Protec ts Two H igh-Speed Data Lines voltage and features high surge cur rent capabilit y of 20A Wor k ing Voltage: 5V (tp=8/20us). ESD charac ter istics are highlighted by high Low Capacitance: 3pF M aximum ESD withstand voltage (+/-30kV per IEC 61000-4-2) and D ynamic R esistance: 0.075 Ohms ( Typ) ex tremely low dynamic resistance (0.075 Ohms t ypical). S olid-State Silicon-Avalanche Technology Each device will protec t t wo lines operating at 5 volts o and are qualified to AEC- Q100, Grade 1 (-40 to +125 C ) Mechanical Characteristics for automotive applications. SGP1006N3T Pack age Pb -Free, Halogen Free, R oHS/WEEE Compliant R Clamp0512TQ is in a 3-pin SGP1006N3T pack age. I t Nominal Dimensions: 1.0 x 0.60 x 0.40 mm measures 1.0 x 0.6 mm with a nominal height of only Lead Finish: N iAu M olding Compound Flammabilit y R ating: UL 94V-0 0.4mm. The leads are finished with lead-free N iAu. M ar k ing : M ar k ing Code + D ot M atr ix Date Code The flow- through pack age design simplifies PCB layout. Pack aging : Tape and R eel Applications Automotive Applications I ndustr ial Equipment I ntegrated M agnetics / RJ-45 Connec tors 10/100/1000 Ether net 2.5GbE USB 2.0 Nominal Dimensions Functional Schematic 1.00 0.70 1 2 12 0.60 0.40 3 Nominal Dimensions in mm Device Schematic RClamp0512TQ Page 1 www.semtech.com Final Datasheet Rev 6 Semtech December 17, 2015Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 1.2/50s) P 170 W PK Peak Pulse Cur rent (tp = 1.2/50s) I 20 A PP (1) ESD per IEC 61000-4-2 (Contac t) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 30 (2) ESD per ISO -10605 (Contac t) 30 V kV ESD (2) ESD per ISO -10605 (Air) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O -40 C to 125 C R everse Stand- O ff Voltage V 5 V R WM B et ween any t wo pins I = 10mA, t O O R everse Breakdown Voltage V -40 C to 125 C 6.5 9.5 11.5 V BR Pin 1 or 2 to Pin 3 O Holding Cur rent I T = 25 C 75 150 250 mA H O T = 25 C 0.01 0.100 A R everse Leak age Cur rent I V = 5V R R WM O T = 125 C 0.03 0.250 A I = 20A, tp = 1.2/50s, (3) PP Clamping Voltage V 5 8.5 V C Pin 1 or 2 to Pin 3 I = 4A, tp = 0.2/100ns ( TLP) (4) PP ESD Clamping Voltage V 4.3 V C Pin 1 or 2 to Pin 3 I = 16A, tp = 0.2/100ns ( TLP) (4) PP ESD Clamping Voltage V 5.2 V C Pin 1 or 2 to Pin 3 tp = 0.2/100ns ( TLP) (4), (5) D ynamic R esistance R 0.075 Ohms DYN Pin 1 or 2 to Pin 3 V = 0V, f = 1MH z R O T = 25 C 2 3 pF Pin 1 or 2 to Pin 3 Junc tion Capacitance C J V = 0V, f = 1MH z R O T = 25 C 1.1 2 pF Pin 1 to Pin 2 Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): ESD Gun return path to Horizontal Coupling Plane (HCP) Test conditions: a)150pF/330pF, 330W b) 150pF/330pF, 2kW (3): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state. (4): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (5): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp0512TQ Page 2 www.semtech.com Final Datasheet Rev 6.0 Semtech December 17, 2015