RClamp3331ZA Ultra Small RailClamp 1-Line, 3.3V ESD Protection PROTECTION PRODUCTS PROTECTION PRODUCTS - RailClamp Features Description RailClamp TVS diodes are ultra low capacitance devices High ESD withstand Voltage: +/-18kV (Contact/Air) designed to protect sensitive electronics from damage per IEC 61000-4-2 or latch-up due to ESD, EFT, and EOS. They are designed Able to withstand over 1000 ESD strikes per for use on high speed ports in applications such as cell IEC 61000-4-2 Level 4 phones, notebook computers, and other portable elec- 0200201 pack1 packageage Ultra-small 0200200201 pack1 pack1 packageageage tronics. These devices offer desirable characteristics for Protects one high speed data line board level protection including fast response time, low Working voltage: +/- 3.3V operating and clamping voltage, and no device degrada- Low capacitance: 0.35pF typical tion. Extremely low dynamic resistance: 0.20 Ohms (Typ) RClamp 3331ZA features extremely good ESD protec- Low ESD clamping voltage tion characteristics including a low typical dynamic resis- Solid-state silicon-avalanche technology tance of 0.20 Ohms, low peak ESD clamping voltage, and high ESD withstand voltage (+/-18kV contact per Mechanical Characteristics IEC 61000-4-2). Low typical capacitance (0.35pF at SLP0603P2X3F Package VR=0V) allows the RClamp3331ZA to be used in applica- Pb-Free, Halogen Free, RoHS/WEEE Compliant tions operating in excess of 5GHz without appreciable Nominal Dimensions: 0.6 x 0.3 x 0.25 mm signal attenuation. Each device will protect one high Lead Finish: NiAu speed data line operating at 3.3 Volts. Marking: Marking Code RClamp3331ZA is in a 2-pin SLP0603P2X3F package Packaging: Tape and Reel measuring 0.6 x 0.3 mm with a nominal height of 0.25mm. Leads are finished with lead-free NiAu. The Applications small package gives the designer the flexibility to USB 2.0 / USB 3.0 protect single lines in applications where arrays are not MIPI / MDDI practical. The combination of low peak ESD clamping, low dynamic resistance, and low capacitance makes V-By-One this device suitable for applications such as USB 3.0, eDP MIPI and V-By-One interfaces in portable devices. MHL LVDS Nominal Dimensions Schematic 0.600 0.220 0.300 1 0.160 0.355 BSC 2 0.250 Nominal Dimensions (in mm) SLP0603P2X3F (Bottom View) www.semtech.com Revision 3/23/2015 1RClamp3331ZA PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 3s0 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 4sAmp pp 1 ESD per IEC 61000-4-2 (Air) V +/- 18 kV ESD 1 ESD per IEC 61000-4-2 (Contact) +/- 18 OTperating Temperature -C40 to +85 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off VoltageP3in 1 to 2 or 2 to 1 3V. RWM BVreakdown Voltage I = 10A 58.5 1V0.5 BR BR Pin 1 to 2 or 2 to 1 RIeverse Leakage Current V = 3.3V, T=25C <01 5An R RWM Pin 1 to 2 or 2 to 1 CVlamping Voltage I = 1A, tp = 8/20s 35.8 5V. C PP Pin 1 to 2 or 2 to 1 CVlamping Voltage I = 4A, tp = 8/20s 55.5 7V. C PP Pin 1 to 2 or 2 to 1 2 ESD Clamping Voltage V IPP = 4A, 4V.5 C tlp = 0.2/100ns 2 ESD Clamping Voltage V IPP = 16A, 7V C tlp = 0.2/100ns 2, 3 Dynamic Resistance Rt0p = 0.2/100ns 0s.2 Ohm D JCunction Capacitance V=50V, f = 1MHz 05.3 0F.4 p j R Notes 1)ESD gun return path connected to ESD ground reference plane. 2)Transmission Line Pulse Test (TLP) Settings: t = 100ns, t = 0.2ns, I and V averaging window: t = 70ns to p r TLP TLP 1 t = 90ns. 2 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP www.semtech.com 2015 Semtech Corporation 2