SDC36C TVS Diode Array for Proximity Switch Protection PROTECTION PRODUCTS Description Features Transient Protection to The SDC36C is a high-surge transient voltage suppressor IEC 61000-4-2 (ESD):15kV (Air), 8kV (Contact) (TVS) optimized for protection of sensitive digital IEC 61000-4-4 (EFT): 40A (5/50ns) sensors used in proximity switches and industrial control IEC 61000-4-5 (Lightning): 4A (8/20s) applications. The SDC36C protects the components from Replaces Two Discrete Devices over-voltages caused by electrostatic discharge (ESD), Protects Two Lines electrical fast transients (EFT), and tertiary lightning. Working Voltage: 33V High Surge capability The unique design of the SDC36C incorporates two Solid-State Silicon-Avalanche Technology TVS diodes in a compact package for applications where board space is at a premium. The single package Mechanical Characteristics provides protection for the I/O line and power supply rail JEDEC SOT-23 Package with high surge capabilities (4 Amps at tp=1.2/50s) and Pb-Free, Halogen Free, RoHS/WEEE Compliant an exceptionally low clamping voltage Molding Compound Flammability Rating: UL 94V-0 of <47V. Marking : Marking Code Packaging : Tape and Reel The SDC36C replaces up to two large discrete diodes providing the designer an easy to implement integrated Applications solution. The SDC36C is in a 3-pin, RoHS/WEEE Two, Three, and Four Wire DC High-Side Proximity compliant, SOT-23 package. The small size and unique Switch features of the SDC36C make it ideal for protection of I/O Link Digital Sensor Input Protection two, three, and four wire DC high-side proximity Industrial Equipment switches. Circuit Diagram Schematic and Pin Configuration 1 2 1 3 2 3 SOT23 (Top View) SDC36C Page 1 www.semtech.com Final Datasheet Rev 2.0 Semtech 5/1/2018Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 350 W PK Peak Pulse Power (tp = 1.2/50s) P 225 W PK Peak Pulse Current (tp = 1.2/50s) I 4 A PP Non-Repetitive Peak Forward Current (tp = 100s) I 4 A FSMAX O Operating Temperature T -55to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O Reverse Stand-Off Voltage V -40 C to 125 C, Pin 3 to Pin 1 or 2 33 V RWM Reverse Breakdown Voltage V I = 1mA, Pin 3 to Pin 1 or 2 35 V BR t O T = 25 C 5 A Reverse Leakage Current I V = 33V R RWM O T = 85 C 25 A Clamping Voltage V I = 2A, tp = 1.2/50s 47 V C PP Forward Voltage V I = 100mA 1.3 V F F Junction Capacitance C V = 0V, f = 1MHz, Pin 3 to Pin 1 or 2 120 pF J R Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (3): Dynamic resistance calculated from I = 4A to I = 16A. TLP TLP SDC36C Page 2 www.semtech.com Final Datasheet Rev 2.0 Semtech 5/1/2018