uClamp0541Z Ultra Small Clamp 1-Line ESD Protection TM PROTECTION PRODUCTS - Z-PakPROTECTION PRODUCTS Features Description Clamp TVS diodes are designed to protect sensitive High ESD withstand Voltage: +/-17kV (Contact/Air) electronics from damage or latch-up due to ESD. It is per IEC 61000-4-2 designed to replace 0201 size multilayer varistors (MLVs) Able to withstand over 1000 ESD strikes per IEC in portable applications such as cell phones, notebook 61000-4-2 Level 4 computers, and other portable electronics. It features Ultra-small 0200200200200201 pack1 pack1 pack1 pack1 packageageageageage large cross-sectional area junctions for conducting high Protects one data or power line transient currents. This device offers desirable charac- Low reverse current: <10nA typical (VR=5V) teristics for board level protection including fast response Working voltage: +/- 5V time, low operating and clamping voltage, and no device Low capacitance: 6.5pF typical degradation. Solid-state silicon-avalanche technology Clamp 0541Z is in a 2-pin SLP0603P2X3 package. It measures 0.6 x 0.3 mm with a nominal height of only Mechanical Characteristics 0.25mm. Leads are finished with lead-free NiAu. Each SLP0603P2X3 package device will protect one line operating at 5 volts. It Pb-Free, Halogen Free, RoHS/WEEE Compliant gives the designer the flexibility to protect single lines in Nominal Dimensions: 0.6 x 0.3 x 0.25 mm applications where arrays are not practical. The Lead Finish: NiAu combination of small size and high ESD surge capability Marking : Marking code + dot matrix date code makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Packaging : Tape and Reel Applications Cellular Handsets & Accessories Keypads, Side Keys, Audio Ports Portable Instrumentation Digital Lines Tablet PC Nominal Dimensions Schematic 0.62 1 0.22 0.32 0.16 0.355 BSC 2 0.25 SLP0603P2X3 (Bottom View) www.semtech.com 2/6/2015 1uClamp0541Z PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 2s5 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 2sAmp pp 1 ESD per IEC 61000-4-2 (Air) V +/- 17 kV ESD 1 ESD per IEC 61000-4-2 (Contact) +/- 17 OTperating Temperature -C55 to +125 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off VoltageP5in 1 to 2 or 2 to 1 V RWM RVeverse Breakdown Voltage I = 1mA 6285. 9V. BR t Pin 1 to 2 or 2 to 1 RIeverse Leakage Current V = 5V, T=25C 305An R RWM Pin 1 to 2 or 2 to 1 CVlamping Voltage I = 1A, tp = 8/20s 1V2 C PP Pin 1 to 2 or 2 to 1 CVlamping Voltage I = 2A, tp = 8/20s 1V5 C PP Pin 1 to 2 or 2 to 1 2, 3 Dynamic Resistance Rt8lp = 0.2 / 100ns 0s.7 Ohm DYN JCunction Capacitance V=50V, f = 1MHz 69. pF j R Notes 1)ESD gun return path connected to ESD ground reference plane. 2)Transmission Line Pulse Test (TLP) Settings: t = 100ns, t = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. p r TLP TLP 1 2 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP www.semtech.com 2015 Semtech Corporation 2