The SE47NS65TS is an N-channel Trench MOSFET from SINO-IC, manufactured in a TO-247S RoHS package. It has a maximum drain source voltage of 650V, drain current of 47A (Id @ 25°C), Gate Threshold Voltage of 4.5V (Vgs @ 250uA), Drain-Source On-Resistance of 70mO (Rds @ 23A, 10V), and is Sn/Pb-Free. This MOSFET is ideally suited for applications such as general power stages, switching regulators, automatic control circuits, solar cell inverters, motor drives, speed control, and high-frequency switching.