X-On Electronics has gained recognition as a prominent supplier of SEBC847BU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SEBC847BU Bipolar Transistors - BJT are a product manufactured by SINO-IC. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SEBC847BU SINO-IC

Name: SEBC847BU
Brand: SINO-IC
SKU: SEBC847BU_SINO-IC
Availability: InStock
Rating: 5 (11 reviews)

SEBC847BU electronic component of SINO-IC

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See Product Specifications

Part No.	SEBC847BU
Manufacturer:	SINO-IC
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 100mA 45V SOT-323 RoHS
Datasheet:	SEBC847BU Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0117 ea
Line Total: USD 0.58

Availability - 48
Ship by Wed. 05 Feb to Mon. 10 Feb

MOQ: 50 Multiples: 50
Pack Size: 50

SEBC847BU More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

48

Ship by Wed. 05 Feb to Mon. 10 Feb

MOQ : 50
Multiples : 50

50 : USD 0.0117
500 : USD 0.0115
3000 : USD 0.0096
6000 : USD 0.0085

Specifications

Manufacturer

SINO-IC SINO-IC

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 523 SOT - 523

Brand Category

Sino-Ic Sino-Ic

Transistor Type

npn npn

Current - Collector Ic Max

100 mA 100 mA

Voltage - Collector Emitter Breakdown Max

45 V 45 V

Power - Max

350 mW 350 mW

Collector Cut-Off Current Icbo

15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo

45 V 45 V

Power Dissipation Pd

350 mW 350 mW

Collector Current Ic

100 mA 100 mA

Dc Current Gain Hfe@Ic Vce

200@2 mA , 5V 200@2 mA , 5V

Transition Frequency Ft

200MHz 200MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

600 mV @100 mA , 5 mA 600 mV @100 mA , 5 mA

Operating Temperature

+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

SEBC847BU Alternative Parts

We are delighted to provide the SEBC847BU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SEBC847BU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The SEBC847BU is a SOT-323 RoHS-compliant NPN transistor manufactured by SINO-IC. It has an average current gain of 100mA and an average collector-emitter voltage of 45V. It is mainly used as a switching circuit component in various applications. This device is available with a range of pin configurations, such as standard SOT-323, ultra-small SOT-323 and thin SOT-323, allowing its use in a range of applications that require miniature components. The SEBC847BU is a low-power device and features low noise, fast switching, and high breakdown voltage. It is suitable for communication, consumer electronics, automotive, and industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
48 Ship by Wed. 05 Feb to Mon. 10 Feb MOQ : 50 Multiples : 50	50 : USD 0.0117 500 : USD 0.0115 3000 : USD 0.0096 6000 : USD 0.0085

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