DATA SHEET SMP1302-085LF: Surface Mount PIN Diode for High Power Switch Applications Applications Low loss, high power switches Low distortion attenuators Features Low-thermal resistance: 22 C/W Suitable for 140 W Continuous Wave T/R switches Figure 1. SMP1302-085LF Block Diagram Low capacitance: 0.3 pF Low distortion performance Description QFN (3-pin, 2 x 2 mm) package (MSL1, 260 C per JEDEC J-STD-020) The SMP1302-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 and maximum capacitance at 30 V is 0.35 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 50 m I-region width, makes the SMP1302-085LF useful in large signal switches and attenuator applications. The device has a 2.8 W dissipation power rating, making it capable of handling more than 140 W Continuous Wave (CW) and 500 W peak (1 s pulse, 1 percent duty cycle) in a shunt- connected transmit/receive (T/R) switch. Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312). A block diagram of the SMP1302-085LF is shown in Figure 1. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 200966N Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice July 17, 2013 1 DATA SHEET SMP1302-085LF SURFACE MOUNT PIN DIODE Table 1. SMP1302-085LF Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units Reverse voltage VR 200 V Forward current 25 C IF 200 mA CW power dissipation 85 C PD 2.8 W Peak pulse power dissipation 85 C (10% duty cycle) 30 W Storage temperature TSTG 65 +200 C Operating temperature TA 40 +150 C Electrostatic Discharge: ESD Charged Device Model (CDM), Class 4 1100 V Human Body Model (HBM), Class 1C 1000 V Machine Model (MM), Class C 400 V Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times. Table 2. SMP1302-085LF Electrical Specifications (Note 1) (T = +25 C Unless Otherwise Noted) A Parameter Symbol Test Condition Min Typical Max Units Reverse current IR V = 200 V 10 A R Capacitance CT f = 1 MHz, V = 30 V 0.35 pF R Resistance RS f = 100 MHz IF = 10 mA 3 IF = 100 mA 1.0 1.5 Forward voltage VF IF = 10 mA 0.8 V Carrier lifetime TL IF = 10 mA 700 ns I region width W 50 m CW thermal resistance JC Junction-to-case 22 C/W Peak thermal resistance P Single 1 s pulse width, 2.2 C/W junction-to-case (10% duty cycle) Note 1: Performance is guaranteed only under the conditions listed in this Table. Electrical and Mechanical Specifications Typical performance characteristics of the SMP1302-085LF are illustrated in Figures 2 and 3. The absolute maximum ratings of the SMP1302-085LF are provided in Table 1. Electrical specifications are provided in Table 2. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 July 17, 2013 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice 200966N