Product Information

2N5321

2N5321 electronic component of Solid State

Datasheet
Bipolar Transistors - BJT . .

Manufacturer: Solid State
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3219 ea
Line Total: USD 2.32

213 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
84 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

2N5321
Solid State

1 : USD 2.5855
10 : USD 2.1376
100 : USD 1.6298
500 : USD 1.323
1000 : USD 1.1025
5000 : USD 1.0474

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
No. Of Pins
LoadingGif

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2N5320 2N5321 NPN 2N5322 2N5323 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: SWITCHING TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE 2N5320 2N5321 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5322 2N5323 UNITS C Collector-Base Voltage V 100 75 V CBO Collector-Emitter Voltage V 100 75 V CEV Collector-Emitter Voltage V 75 50 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 2.0 A C Continuous Base Current I 1.0 A B Power Dissipation P 10 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 17.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N5320 2N5321 2N5322 2N5323 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=80V - 0.5 - - A CBO CB I V=60V - - - 5.0 A CBO CB I V=5.0V - 0.1 - - A EBO EB I V=4.0V - - - 0.5 A EBO EB BV I =100A, V=1.5V 100 - 75 - V CEV C BE BV I=10mA 75 - 50 - V CEO C BV I=100A 6.0 - 5.0 - V EBO E V I =500mA, I =50mA (2N5320) - 0.5 - - V CE(SAT) C B V I =500mA, I =50mA (2N5321) - - - 0.8 V CE(SAT) C B V I =500mA, I =50mA (2N5322) - 0.7 - - V CE(SAT) C B V I =500mA, I =50mA (2N5323) - - - 1.2 V CE(SAT) C B V V =4.0V, I=500mA - 1.1 - 1.4 V BE(ON) CE C h V =4.0V, I=500mA 30 175 40 250 FE CE C h V =2.0V, I=1.0A 10 - - - FE CE C f V =4.0V, I=50mA, f=10MHz 50 - 50 - MHz T CE C R5 (11-May 2017)2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MAX UNITS t V =30V, I =500mA, I =50mA (2N5320, 2N5321) 80 ns on CC C B1 t V =30V, I =500mA, I =50mA (2N5322, 2N5323) 100 ns on CC C B1 t V =30V, I =500mA, I =I =50mA (2N5320, 2N5321) 800 ns off CC C B1 B2 t V =30V, I =500mA, I =I =50mA (2N5322, 2N5323) 1.0 s off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (11-May 2017) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
SOLID STATE INC.
SOLID STATE OPT
Solid State System

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