A1P50S65M2 Datasheet ACEPACK 1 sixpack topology, 650 V, 50 A, trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 1 power module DBC Cu Al O Cu 2 3 Sixpack topology 650 V, 50 A IGBTs and diodes Soft and fast recovery diode Integrated NTC ACEPACK 1 Applications Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1P50S65M2 Product summary Order code A1P50S65M2 Marking A1P50S65M2 Package ACEPACK 1 Leads type Solder contact pins DS12332 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.A1P50S65M2 Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at T = 25 C, unless otherwise specified. J Table 1. Absolute maximum ratings of the IGBT Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE I Continuous collector current (T = 100 C) 50 A C C (1) I Pulsed collector current (t = 1 ms) 100 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 208 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V I = 1 mA, V = 0 V 650 V (BR)CES C GE breakdown voltage V = 15 V, I = 50 A 1.95 2.3 GE C V Collector-emitter CE(sat) V saturation voltage (terminal) V = 15 V, I = 50 A, T = 150 C 2.3 GE C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I V = 0 V, V = 650 V Collector cut-off current 100 A CES GE CE Gate-emitter leakage I V = 0 V, V = 20 V 500 nA GES CE GE current C Input capacitance 4150 pF ies V = 25 V, f = 1 MHz, CE C Output capacitance 170 pF oes V = 0 V GE Reverse transfer C 80 pF res capacitance V = 520 V, I = 50 A, CC C Q Total gate charge 150 nC g V = 15 V GE t Turn-on delay time 143 ns d(on) V = 300 V, I = 50 A, CC C t Current rise time 16.5 ns r R = 6.8 , V = 15 V, G GE (1) di/dt = 2400 A/s E Turn-on switching energy 0.140 mJ on t Turn-off delay time 112 ns d(off) V = 300 V, I = 50 A, CC C t Current fall time R = 6.8 , V = 15 V, 149 ns f G GE (2) dv/dt = 7600 V/s E Turn-off switching energy 1.45 mJ off DS12332 - Rev 3 page 2/14