ACS108-6S Overvoltage protected AC switch (ACS) Datasheet production data Features Needs no external protection snubber or varistor Enables equipment to meet IEC 61000-4-5 COM Reduces component count by up to 80% OUT Interfaces directly with the micro-controller G Common package tab connection supports connection of several alternating current SMBflat-3L ACS108-6SUF switches (ACS) on the same cooling pad Integrated structure based on A.S.D. technology Overvoltage protection by crowbar technology High noise immunity - static dV/dt > 500 V/s Applications Figure 1. Functional diagram OUT Alternating current on/off static switching in appliances and industrial control systems Drive of low power high inductive or resistive loads like: G relay, valve, solenoid, dispenser, door lock pump, fan, low power motor COM COM Common drive reference to connect Description to the mains OUT Output to connect to the load. The ACS108-6S belongs to the AC line switch G Gate input to connect to the controller through gate resistor family. This high performance switch can control a load of up to 0.8 A. The ACS108-6S switch includes an overvoltage Table 1. Device summary crowbar structure to absorb the overvoltage Symbol Value Unit energy, and a gate level shifter driver to separate the digital controller from the main switch. It is I 0.8 A T(RMS) triggered with a negative gate current flowing out V /V 600 V DRM RRM of the gate pin. I 10 mA GT : A.S.D. is a registered trademark of STMicroelectonics TM: ACS is a trademark of STMicroelectronics June 2012 Doc ID 11962 Rev 4 1/12 This is information on a product in full production. www.st.com 12Characteristics ACS108-6S 1 Characteristics Table 2. Absolute maximum ratings (T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit T = 62 C 0.45 A amb I On-state rms current (full sine wave) T(RMS) T = 113 C 0.8 A tab Non repetitive surge peak on-state F = 60 Hz t = 16.7 ms 7.6 I current A TSM F = 50 Hz t = 20 ms 7.3 (full cycle sine wave, T initial = 25 C) j 2 2 I t It Value for fusing t = 10 ms 0.38 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2xI , tr 100 ns G GT (1) V Non repetitive line peak mains voltage T = 25 C 2 kV PP j I Peak gate current t = 20 s T = 125 C 1 A GM p j V Peak positive gate voltage T = 125 C 10 V GM j P Average gate power dissipation T = 125 C 0.1 W G(AV) j T Storage junction temperature range -40 to +150 stg C T Operating junction temperature range -30 to +125 j 1. according to test described by IEC 61000-4-5 standard and Figure 19 Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit (1) I II - III Max. 10 mA GT V = 12 V, R = 33 OUT L V II - III Max. 1 V GT V V = V , R =3.3 k, T = 125 C II - III Min. 0.15 V GD OUT DRM L j (2) I I = 100 mA Max. 25 mA H OUT (2) I I = 1.2 x I Max. 30 mA L G GT (2) dV/dt V = 67% V , gate open, T = 125 C Min. 500 V/s OUT DRM j (2 (dI/dt)c A/ms Without snubber (15 V/s), turn-off time 20 ms, T = 125 C Min. 0.3 ) j V I = 0.1 mA, t = 1 ms, T = 125 C Min. 650 V CL CL p j 1. Minimum I is guaranteed at 10% of I max GT GT 2. For both polarities of OUT referenced to COM 2/12 Doc ID 11962 Rev 4