ACS108-8TN TM Overvoltage protected AC switch (ACS ) Datasheet - production data Description The ACS108-8TN belongs to the AC switch range (built with A.S.D. technology). This high CO M performance switch can control a load of up to 0.8 A. The ACS108-8TN switch includes an overvoltage crowbar structure to absorb the inductive turn-off G energy, and a gate level shifter driver to separate CO M the digital controller from the main switch. It is OU T triggered with a negative gate current flowing out of the gate pin. SOT-223 Figure 1: Functional diagram OUT Features Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology G High noise immunity against static dV/dt and IEC 61000-4-4 burst Needs no external protection snubber or varistor COM Interfaces directly with the microcontroller COM Common drive reference to connect ECOPACK 2 and RoHS compliant to the mains OUT Output to connect to the load. component G Gate input to connect to the controller through gate resistor Applications Alternating current on/off static switching in Table 1: Device summary appliances and industrial control systems Symbol Value Driving low power high inductive or resistive IT(RMS) 0.8 A loads like: Relay, valve, solenoid, dispenser V /V 800 V DRM RRM Pump, fan, low power motor, door lock IGT 5 mA lamp June 2016 DocID029064 Rev 1 1/14 www.st.com This is information on a product in full production. Characteristics ACS108-8TN 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit RMS on-state current I T = 104 C 0.8 A T(RMS) tab (180 conduction angle) t = 16.7 ms 13.7 p Non repetitive surge peak ITSM Tj initial = 25 C A on-state current tp = 20 ms 13 2 2 2 I t I t value for fusing t = 10 ms T = 25 C 1.1 A s p j VRRM / Repetitive peak off-state voltage T = 125 C 800 V j VDRM Critical rate of rise of I = 2 x I , G GT dl/dt f = 120 Hz 100 A/s on-state current tr 100 ns (1) Vpp Non repetitive peak pulse line voltage Tj = 25 C 2 kV I Peak gate current t = 20 s T = 125 C 1 A GM p j VGM Peak positive gate voltage Tj = 125 C 10 V P Average gate power dissipation T = 125 C 0.1 W G(AV) j Tstg Storage junction temperature range -40 to +150 C T Maximum operating junction temperature range -40 to +125 C j Notes: (1) According to test described by IEC 61000-4-5 standard and test per Figure 18 . Table 3: Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Quadrant Value Unit (1) I II - III Max. 5 mA GT VOUT = 12 V, RL = 33 VGT II - III Max. 1 V V V = V , R = 3.3 k, T = 125 C II - III Min. 0.15 V GD OUT DRM L j IH IT = 100 mA, gate open Max. 10 mA I I = 1.2 x I Max. 20 mA L G GT VD = 402 V, gate open, Tj = 125 C 600 dV/dt Max. V/s V = 536 V, gate open, T = 125 C 300 D j (dl/dt)c (dl/dt)c < 15 V/s, turn-off time 20 ms, Tj = 125 C Min. 0.8 A/ms V I = 1 mA, t = 1 ms, T = 125 C Min. 850 V CL CL p j Notes: (1) Minimum I is guaranteed at 10% of I max. GT GT 2/14 DocID029064 Rev 1