ACS120-7SFP STMicroelectronics

ACS120 Overvoltage protected AC switch (ACS) Datasheet - production data Applications AC static switching in appliance control systems &20 Drive of low power high inductive or resistive loads like: Relay, valve, solenoid, dispenser 287 Pump, fan, micro-motor * * . 3 % 2 )3 7 Defrost heater &20 287 &20 Description The ACS120 belongs to the AC line switch family. This high performance switch circuit is able to * control a load of up to 2 A. &20 287 The ACS switch embeds a high voltage 2 % 7 clamping structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out Features of the gate pin. Blocking voltage: V / V = +/- 700 V DRM RRM Figure 1. Functional diagram Avalanche controlled: V typ. = 1100 V CL 287 Nominal conducting current: I = 2 A T(RMS) Gate triggering current: I < 10 mA GT High noise immunity: static dV/dt > 500 V/s * Benefits Needs no more external protection snubber or varistor Enables equipment to meet IEC 61000-4-5 &20 Reduces component count up to 80% &20 HUHQFH WR FRQQHFW H UHI &RPPRQ GU LY Interfaces directly with the micro controller WR WKH PDLQV 287 2XWSXW WR FRQQHFW WR WKH ORDG Eliminates any gate kick back on the micro- * *DWH LQSXW WR FRQQHFW WR WKH FRQWUROOHU controller WKURXJK JDWH UHVLVWRU Allows straightforward connection of several AC switches on same cooling pad May 2016 DocID9469 Rev 4 1/17 This is information on a product in full production. www.st.comCharacteristics ACS120 1 Characteristics Table 1. Absolute ratings (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol Parameter Value Unit V /V Repetitive peak off-state voltage 700 V DRM RRM DPAK T = 119 C C On-state RMS current full cycle sine wave I TO-220FPAB T = 117 C 2 A T(RMS) C 50 to 60 Hz TO-220AB T = 119 C C t = 20 ms 20 A Non repetitive surge peak on-state current P I TSM T initial = 25 C, full cycle sine wave J t = 16.7 ms 21 A P 2 2 It Fusing capability t = 10 ms 2.6 A s P Repetitive on-state current critical rate of dI/dt T = 125 C f = 120 Hz 50 A/s j rise I = 10 mA (t < 100 ns) G r (1) V Non repetitive line peak pulse voltage 2 kV PP T Storage temperature range - 40 to + 150 C stg T Operating junction temperature range - 30 to + 125 C J T Maximum lead soldering temperature during 10 s 260 C L 1. According to test described by IEC 61000-4-5 standard and Figure 17. Table 2. Switch Gate characteristics (maximum values) Symbol Parameter Value Unit P Average gate power dissipation 0.1 W G(AV) I Peak gate current (t = 20 s) 1 A GM P V Peak positive gate voltage (in respect to pin COM) 5 V GM Table 3. Thermal resistances Symbol Parameter Value Unit 2(1) S = 0.5 cm DPAK 70 C/W R Junction to ambient TO-220FPAB 60 C/W th (j-a) TO-220AB 60 C/W DPAK 2.6 C/W R Junction to case TO-220FPAB 3.5 C/W th (j-c) TO-220AB 2.6 C/W 1. S = Copper surface under tab 2/17 DocID9469 Rev 4