ACS108-8SUN Overvoltage protected AC switch (ACS) Datasheet production data Description COM The ACS108-8SUN belongs to the AC line switch range (built with A.S.D. technology).This high OUT performance switch can control a load of up to 0.8 A. The ACS108-8SUN switch includes an G overvoltage crowbar structure to absorb the overvoltage energy and a gate level shifter driver SMBflat-3L to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin. Features Less footprint area than SOT-223 (saves PCB) Figure 1. Functional diagram OUT ECOPACK 2 compliant component Thinner option versus SOT-223 (1.1 mm max. thickness) G Enables equipment to meet IEC 61000-4-5 High noise immunity against static dV/dt and IEC 61000-4-4 burst Overvoltage protection by crowbar technology COM COM Common drive reference to connect Needs no external protection snubber or to the mains OUT Output to connect to the load. varistor G Gate input to connect to the controller through gate resistor Reduces component count by up to 80% and Interfaces directly with the micro-controller V gives headroom before clamping then CL Table 1. Device summary crowbar action Symbol Value Unit Common package tab connection supports connection of several alternating current I 0.8 A T(RMS) switches on the same cooling pad V / V 800 V DRM RRM I 10 mA GT Applications Alternating current on/off static switching in appliances and industrial control systems Drive of low power high inductive or resistive : ECOPACK2 is a registered trademark of loads like: STMicroelectronics relay, valve, solenoid, dispenser, TM: ACS is a trademark of STMicroelectronics pump, fan, low power motor, door lock, : A.S.D. is a registered trademark of STMicroelectronics lamp July 2014 DocID022948 Rev 1 1/12 This is information on a product in full production. www.st.com 12Characteristics ACS108-8SUN 1 Characteristics Table 2. Absolute maximum ratings (T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit S = 0.5 cm T = 75 C 0.45 A amb I On-state rms current (full sine wave) T(RMS) T = 113 C 0.8 A tab Non repetitive surge peak on-state F = 60 Hz t = 16.7 ms 13.7 I current (full cycle sine wave, A TSM F = 50 Hz t = 20 ms 13 T initial = 25 C) j 2 2 I t It Value for fusing t = 10 ms 1.1 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2xI , tr 100 ns G GT (1) V Non repetitive line peak pulse mains voltage T = 25 C 2 kV PP j I Peak gate current t = 20 s T = 125 C 1 A GM p j V Peak positive gate voltage T = 125 C 10 V GM j P Average gate power dissipation T = 125 C 0.1 W G(AV) j T Storage junction temperature range -40 to +150 stg C T Operating junction temperature range -30 to +125 j 1. according to test described by IEC 61000-4-5 standard and Figure 19 Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit (1) I II - III Max. 10 mA GT V = 12 V, R = 33 OUT L V II - III Max. 1 V GT V V = V , R =3.3 k, T = 125 C II - III Min. 0.15 V GD OUT DRM L j I I = 100 mA Max. 10 mA H OUT I I = 1.2 x I Max. 25 mA L G GT V = 402 V, gate open, T = 125 C Min. 2000 V/s OUT j dV/dt V = 536 V, gate open, T = 125 C Min. 400 V/s OUT j (dI/dt)c Without snubber (15 V/s), turn-off time 20 ms, T = 125 C Min. 2 A/ms j V I = 0.1 mA, t = 1 ms, T = 125 C Min. 850 V CL CL p j 1. Minimum I is guaranteed at 10% of I max GT GT 2/12 DocID022948 Rev 1