BTW67 Datasheet 50 A,1000 V SCR thyristor in RD91 Features A High current SCR High commutation capability G Low thermal resistance with clip bonding K Insulated package RD91 high power: Low thermal resistance with clip bonding Insulated voltage: 2500 V RMS Complies with UL 1557 (File ref : E81734) RoHS (2002/95/EC) compliant Applications RD91 Solid state relays Welding equipment High power motor control Description Available in 2500 V insulated high power package, the 50 A and 1000 V SCR BTW67 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment and high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Product status link BTW67 Product summary I 50 A T(RMS) V /V 1000 V DRM RRM I 80 mA GT DS0642 - Rev 6 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.BTW67 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit I T = 70 C RMS on-state current (full sine wave) 50 A T(RMS) c Average on-state current IT T = 70 C 32 A (AV) c (180 conduction angle) I Non repetitive surge peak on-state current (full cycle, T initial = 25 C) t =8.3 ms 610 A TSM j p 2 2 2 t = 10 ms 1680 I t I t value for fusing p A s Critical rate of rise of on-state current T = 125 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 8 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Maximum peak reverse gate voltage 5 V GRM V Insulation RMS voltage, 1 minute 2500 V ins Table 2. Electrical characteristics (T = 25C, unless otherwise specified) j Symbol Test conditions T Value Unit j Min. 8 I mA GT V = 12 V, R = 33 25 C Max 80 D L V Max 1.3 V GT V V = V , R = 3.3 k 125 C Min. 0.2 V GD D DRM L I I = 500 mA, gate open Max. 150 mA H T I I = 1.2 x I Max. 200 mA L G GT V = 67 %, V gate open dV/dt 125 C Min. 1000 V/s D DRM V I = 100 A, = 380 s 25 C Max. 1.9 V TM TM tp V threshold on-state voltage 125 C Max. 1.0 V TO R Dynamic resistance 125 C Max. 8.5 m D 25 C 10 A I /I V = V , V = V Max. DRM RRM D DRM R RRM 125 C 5 mA Table 3. Thermal resistance Symbol Parameters Value Unit R Junction to case (D.C) 1.0 C/W th(j-c) DS0642 - Rev 6 page 2/10