BTW68 30 A SCRs Features A On-state rms current: 30 A Blocking voltage: up to 1200 V G Gate current: 50 mA K UL 2500 V insulation (file ref E81734) Description Available in a high power insulated package, the BTW68 series is suitable for applications where power handling and power dissipation are critical K A such as solid state relays, welding equipment and G high power motor control. TOP3 ins. Based on a clip assembly technology, this device offers a superior performance in surge current handling capabilities. Table 1. Device summary Thanks to the internal ceramic pad, the device provides high voltage insulation (2500 V and RMS) Symbol Value complies with UL standards (file ref: E81734). I 30 A T(RMS) V /V 600 to 1200 V DRM RRM I 50 mA GT July 2010 Doc ID 17757 Rev 3 1/8 www.st.com 8Characteristics BTW68 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state current rms (180 conduction angle) T = 80 C 30 A T(RMS) c IT Average on-state current (180 conduction angle) T = 80 C 19 A (AV) c t = 8.3 ms 420 p Non repetitive surge peak on-state I T = 25 C A TSM j current t = 10 ms 400 p 2 ItI t Value for fusing T = 25 C 800 A S j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 100 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 8 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit I MIN. 50 mA GT V = 12 V, R = 33 D L V MAX. 1.5 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM, L j t V = V , I = 200 mA, dI /dt = 1.5 A/s TYP. 2 s gt D DRM G G I I = 500 mA, gate open MAX. 75 mA H T I I = 1.2 x I TYP. 40 mA L G GT V = 800 V 500 DRM V = 67 % V D DRM dV/dt T = 125 C MIN. V/s j gate open V = 1000 V 250 DRM V I = 60 A, t = 380 s MAX. 2.1 V TM TM p T = 25 C 20 A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 6 mA j V = 67% V , I = 60 A, V = 75 V D DRM TM R t T = 125 C TYP. 100 s j q dI /dt = 30 A/s, dV /dt = 20 V/s TM D Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (D.C.) 1.1 C/W th(j-c) R Junction to ambient 50 C/W th(j-a) 2/8 Doc ID 17757 Rev 3