HDMI05-CL02F3 5-line IPAD, HDMI control line ESD protection Features Low line capacitance: 12 pF max. High efficiency in ESD protection Lead-free package Very thin package Flip Chip High reliability offered by monolithic integration 9 bumps High reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin configuration (bump side) Complies with the standards: 3 2 1 IEC 61000-4-2 Level 4 15 kV (air discharge) SCL CEC 5V A 8 kV (contact discharge) IEC 61000-4-2 Level 1 SDA GND RPU2 B 2 kV (air discharge) 2 kV (contact discharge) GND HPD RPU C Application Where ESD protection for HDMI control lines (CEC, HPD, SCL and SDA) is required: Figure 2. Schematic Mobile phones and communication systems A1 5V Portable multimedia players CEC A2 Camcorder, digital still cameras SCL A3 SDA B3 HPD C3 Description The HDMI05-CL02F3 chip is a low capacitance ESD protection for HDMI control pins. It also integrates pull-up resistor for IC bus and pull- down resistor for hot plug detect and pull-up B2 and C2 are ground pins C1 B1 resistor for CEC line. The ESD protection circuitry prevents damage to the protected device when subjected to ESD surges up to 15 kV. TM: IPAD is a trademark of STMicroelectronics. HDMI, the HDMI logo and High-Definition Multimedia Interface are trademarks or registered trademarks of HDMI Licensing LLC. April 2010 Doc ID 15516 Rev 2 1/9 www.st.com 9 R3 R2 R1 R4Characteristics HDMI05-CL02F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit External pins (A1, A2, A3, B3 and C3): ESD IEC 61000-4-2, level 4 - air discharge 15 ESD IEC 61000-4-2, level 4 - contact discharge 8 V kV PP Internal pins (B1, C1): ESD IEC 61000-4-2, level 1 - air discharge 2 ESD IEC 61000-4-2, level 1 - contact discharge 2 Pd Line resistance power dissipation at 70 C 60 mW T Operating temperature range -30 to + 85 C op T Storage temperature range -55 to + 150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I F I = Leakage current V RM RM V = Stand-off voltage RM V V = Clamping voltage F CL R = Dynamic impedance d V V V CL BR RM V I = Peak pulse current I RM PP I R I = Breakdown current R T = Voltage temperature coefficient V = Forward voltage drop F Slope = 1/Rd C = Line capacitance I line PP R = Series resistance between Input I/O Table 2. Electrical characteristics (T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 6 20 V BR R I V = 3 V per line 50 200 nA RM RM R , R 1575 1750 1925 1 2 R 80 100 120 k 3 R 22 27 32 k 4 V = 0 V, V = 30 mV, F = 1 MHz line osc 14 17 CEC to GND with R not connected PU2 C 24 29 pF line SCL and SDA to GND with R not connected PU (measured under zero light conditions) V = 0 V, V = 30 mV, F = 1 MHz line osc CEC, SCL and SDA to GND with R and R (1) PU PU2 C 10 12 pF line grounded (measured under zero light conditions) 1. This is the line capacitance seen by the data signals in the application conditions 2/9 Doc ID 15516 Rev 2