L6569AD STMicroelectronics

L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR n HIGH VOLTAGE RAIL UP TO 600V n BCD OFF LINE TECHNOLOGY n INTERNAL BOOTSTRAP DIODE STRUCTURE n 15.6V ZENER CLAMP ON V S n DRIVER CURRENT CAPABILITY: Minidip SO8 - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA ORDERING NUMBERS: n VERY LOW START UP CURRENT: 150A L6569 L6569D n UNDER VOLTAGE LOCKOUT WITH L6569A L6569AD HYSTERESIS n PROGRAMMABLE OSCILLATOR FREQUENCY be programmed using external resistor and capaci- n tor. The internal circuitry of the device allows it to be DEAD TIME 1.25s driven also by external logic signal. n dV/dt IMMUNITY UP TO 50V/ns The output drivers are designed to drive external n- n ESD PROTECTION channel power MOSFET and IGBT. The internal log- s to avoid cross- ic assures a dead time typ. 1.25 DESCRIPTION conduction of the power devices. The device is a high voltage half bridge driver with Two version are available: L6569 and L6569A. They built in oscillator. The frequency of the oscillator can differ in the low voltage gate driver start up sequence. BLOCK DIAGRAM H.V. R HV C VS V BOOT S 18 Source CHARGE PUMP 7 HVG BIAS LEVEL C BOOT REGULATOR SHIFTER V S HIGH SIDE R2 BUFFER DRIVER F 6 OUT LOAD R F C3 COMP F V S C LOW SIDE F DRIVER COMP LOGIC LVG GND4 5 D94IN058D June 2000 1/13 This is preliminary information on a new product now in development. Details are subject to change without notice.L6569 L6569A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I (*) Supply Current 25 mA S V Oscillator Resistor Voltage 18 V CF V Low Side Switch Gate Output 14.6 V LVG V High Side Switch Source Output -1 to V -18 V OUT BOOT V High Side Switch Gate Output -1 to V V HVG BOOT V Floating Supply Voltage 618 V BOOT V Floating Supply vs OUT Voltage 18 V BOOT/OUT dV /dt VBOOT Slew Rate (Repetitive) 50 V/ns BOOT dV /dt VOUT Slew Rate (Repetitive) 50 V/ns OUT T Storage Temperature -40 to 150 C stg T Junction Temperature -40 to 150 C j T Ambient Temperature (Operative) -40 to 125 C amb (*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low im- pedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model) THERMAL DATA Symbol Parameter Minidip SO8 Unit R Thermal Resistance Junction-Ambient Max 100 150 C/W th j-amb RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min. Max. Unit V Supply Voltage 10 V V S CL V Floating Supply Voltage - 500 V BOOT V High Side Switch Source Output -1 V -V V OUT BOOT CL f Oscillation Frequency 200 kHz out PIN CONNECTION V 1 8 BOOT S RF 2 7 HVG C 3 6 OUT F GND 4 5 LVG D94IN059 2/13